Abstract： 4.2MeV 7Li channeling technique, laser Raman scattering spectrometry, and TEM have been utilized to study the regrowth of MBE-GaAs films of ~μm thick on Si substrates by Si+ implantation (0.6-2.6Me V) and subsequent rapid thermal annealing. The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.
(Growth from solid phases (including multiphase diffusion and recrystallization))
引用本文:
XIAO Guangming;YIN Shiduan;ZHANG Jingping;FAN Tiwen;LIU Jiarui*;DING Aiju*;ZHOU Junming*;ZHU Peiruan*. REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING
[J]. 中国物理快报, 1989, 6(10): 451-454.
XIAO Guangming, YIN Shiduan, ZHANG Jingping, FAN Tiwen, LIU Jiarui*, DING Aiju*, ZHOU Junming*, ZHU Peiruan*. REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING
. Chin. Phys. Lett., 1989, 6(10): 451-454.
1989, Vol. 6 
