Wurtzite Boron Nitride Crystal Growth in the Region of Cubic Boron Nitride Crystal Synthesizing
ZHANG Tie-chen, YU San, LI Dong-mei, GUO Wei-li, GAO Chun-xiao, ZOU Guang-tian
National Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
Wurtzite Boron Nitride Crystal Growth in the Region of Cubic Boron Nitride Crystal Synthesizing
ZHANG Tie-chen;YU San;LI Dong-mei;GUO Wei-li;GAO Chun-xiao;ZOU Guang-tian
National Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
关键词 ：
78.30.Fs ,
81.30.-t ,
81.10.Jt
Abstract ： Micro-grains of wurtzite boron nitride(wBN) crystal have been observed in the region of 5.0-7.0 GPa pressure and 1800-2000 K temperature where cubic boron nitride has been synthesized in the presence of a catalyst. The wBN grain size is about 20-30nm. The presence of these micro-grains indicates that the pressure for wBN growth could be lower than that found in the previous work.
Key words ：
78.30.Fs
81.30.-t
81.10.Jt
出版日期: 1998-01-01
:
78.30.Fs
(III-V and II-VI semiconductors)
81.30.-t
(Phase diagrams and microstructures developed by solidification and solid-solid phase transformations)
81.10.Jt
(Growth from solid phases (including multiphase diffusion and recrystallization))
引用本文:
ZHANG Tie-chen;YU San;LI Dong-mei;GUO Wei-li;GAO Chun-xiao;ZOU Guang-tian. Wurtzite Boron Nitride Crystal Growth in the Region of Cubic Boron Nitride Crystal Synthesizing[J]. 中国物理快报, 1998, 15(1): 70-71.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I1/70
[1]
XU Chuan-Ming;SUN Yun;LI Feng-Yan;ZHANG Li;XUE Yu-Ming;HE Qing;LIU Hong-Tu. Nonlinear Shift of the Raman A1 Mode in Ga-Incorporated CuInSe2 Thin Films
[2]
XUE Shou-Bin;ZHUANG Hui-Zhao;XUE Cheng-Shan;HU Li-Jun. Synthesis of GaN Nanorods by Ammoniating Ga2 O3 /ZnO Films
[3]
AI Yu-Jie;XUE Cheng-Shan;SUN Li-Li;SUN Chuan-Wei;ZHUANG Hui-Zhao;WANG Fu-Xue;CHEN Jin-Hua;LI Hong. Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique
[4]
QIN Qi;GUO Li-Wei;ZHOU Zhong-Tang;CHEN Hong;DU Xiao-Long;MEI Zeng-Xia;JIA Jin-Feng;XUE Qi-Kun;ZHOU Jun-Ming. Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases
[5]
DENG Guo-Chu;DING Ai-Li;ZHENG Xin-Sen;CHENG Wen-Xiu;QIU Ping-Sun. Growth of Zinc Oxide Thornballs by a Novel Method
[6]
ZHANG Xi-Jian;MA Hong-Lei;WANG Qing-Pu;MA Jin;ZONG Fu-Jian;XIAO Hong-Di;JI Feng. Structure Properties of Mgx Zn1-x O Films Deposited at Low Temperature
[7]
CHEN Jian-Gang;GUO Chang-Xin;ZHANG Lin-Li;HU Jun-Tao. Preparation and Luminescent Properties of ZnO Microrods and Microtubes
[8]
LI Tao;YANG Shao-Guang;HUANG Li-Sheng;GU Ben-Xi;DU You-Wei. Formation of Co3 O4 Nanotubes and the Magnetic Behaviour at Low Temperature
[9]
CHANG Yong-Qin;YU Da-Peng;LI Guo-Hua;FANG Zai-Li;ZHANG Ye;CHEN Yao-Feng;YANG FU-Hua. Photoluminescence Characterization of Nanocrystalline ZnO Array
[10]
LI Guo-Qiang;JIE Wan-Qi;GU Zhi;HUA Hui. Correlation Between the IR Transmission Spectra and the CdZnTe Qualities
[11]
LU Min;YANG Hua;LI Zi-Lan;YANG Zhi-Jian;LI Zhong-Hui;REN Qian;JIN Chun-Lai;LU Shu;ZHANG Bei;ZHANG Guo-Yi. Dopant Effects on Defects in GaN Films Grown by Metal-Organic
Chemical Vapor Deposition
[12]
LIN Xuan-Ying;HUANG Chuang-Jun;LIN Kui-Xun;YU Yun-Peng;YU Chu-Ying;CHI Ling-Fei. Low-Temperature Growth of Polycrystalline Silicon Films by
SiCl4 /H2 rf Plasma Enhanced Chemical Vapor Deposition
[13]
ZOU Lu;YE Zhi-Zhen;HUANG Jing-Yun;ZHAO Bing-Hui. Structural Characterization and Photoluminescent Properties of
Zn1-x Mgx O Films on Silicon
[14]
ZHOU Jing;ZHANG Guo-Yi. Growth and Optical Properties of Double Heterostructure GaN/InGaN/GaN Films with Large Composition
[15]
CHEN Zhi-Zhong;ZHANG Rong;ZHU Jian-Min;QIN Zhi-Xin;SHEN Bo;
GU Shu-Lin;WANG Feng;ZHENG You-Dou;ZHANG Guo-Yi;LI Zhi-Feng;L. F. KUECH. Microstructures of GaN Films Laterally Overgrown on Si(111) by Hydride Vapor Phase Epitaxy
1998, Vol. 15 
