Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation
ZHU Sheng-yun, LUO Qi, FAN Zhi-guo, WANG Chun-rui, ZHENG Sheng-nan, GOU Zhen-hui, LI An-li, QIAN Jia-yu1
China Institute of Atomic Energy, Beijing 102413
1 Beijing General Research Institute for Non-ferrous Metals, Beijing 100088
Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation
ZHU Sheng-yun;LUO Qi;FAN Zhi-guo;WANG Chun-rui;ZHENG Sheng-nan;GOU Zhen-hui;LI An-li;QIAN Jia-yu1
China Institute of Atomic Energy, Beijing 102413
1 Beijing General Research Institute for Non-ferrous Metals, Beijing 100088
关键词 ：
61.80.-x ,
61.72.-y
Abstract ： The defects induced by 64 MeV 19 F ion irradiation to a Auence of 4.3 ×1016 /cm2 are investigated in GaAs by positron annihilation lifetime technique. Di-vacancies are created by the irradiation. The formation of tri- and quadri-vacancies is observed during thermal annealing. The di-, tri-and quadri-vacancies are annealed away at 350, 550 and 800°C, respectively.
Key words ：
61.80.-x
61.72.-y
出版日期: 1997-07-01
:
61.80.-x
(Physical radiation effects, radiation damage)
61.72.-y
(Defects and impurities in crystals; microstructure)
引用本文:
ZHU Sheng-yun;LUO Qi;FAN Zhi-guo;WANG Chun-rui;ZHENG Sheng-nan;GOU Zhen-hui;LI An-li;QIAN Jia-yu. Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation
[J]. 中国物理快报, 1997, 14(7): 535-537.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I7/535
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