Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films
WANG Shuang-Bao, ZHU Pei-Ran, WANG Yu-Guang, FENG Ke-An
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films
WANG Shuang-Bao;ZHU Pei-Ran;WANG Yu-Guang;FENG Ke-An
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
68.55.-a ,
61.72.-y ,
61.80.Jh
Abstract ： Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120 keV H+ to dose of 5 x 1014 ~ 5 x 1016 cm-2 . After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases. In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.
Key words ：
68.55.-a
61.72.-y
61.80.Jh
出版日期: 2000-09-01
:
68.55.-a
(Thin film structure and morphology)
61.72.-y
(Defects and impurities in crystals; microstructure)
61.80.Jh
(Ion radiation effects)
引用本文:
WANG Shuang-Bao;ZHU Pei-Ran;WANG Yu-Guang;FENG Ke-An. Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films[J]. 中国物理快报, 2000, 17(9): 686-688.
+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films. Chin. Phys. Lett., 2000, 17(9): 686-688.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I9/686
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2000, Vol. 17 
