In situ Observation of Mo Implanted HI3 Steel by Transmission Electron Microscopy
GAO Yuzun* , SUN Guiru* , ZHANG Tonghe, JI Chengzhou, YANG Janhua
* Beijing Research Institute for Non-ferrous Metals, Beijing 100088
Institute of Low Energy Physics, Beijing Normal University, Beijing 100875
In situ Observation of Mo Implanted HI3 Steel by Transmission Electron Microscopy
GAO Yuzun* ;SUN Guiru* ;ZHANG Tonghe;JI Chengzhou;YANG Janhua
* Beijing Research Institute for Non-ferrous Metals, Beijing 100088
Institute of Low Energy Physics, Beijing Normal University, Beijing 100875
关键词 ：
61.80.-x ,
07.80.+x
Abstract ： In situ observation in high voltage transmission electron microscope (HVEM) was used to investigate the structure of Mo implanted HI3 steel. Instead of tempered Martensite structure, the implanted layer has a fine grain structure. When the implanted specimen is heated inside the HVEM, the fine grain structure does not change until 500°C. The electron diffraction pattern of precipitates FeMo appears at 500°C. Recrystallization and grain growth occur at 650°C.
Key words ：
61.80.-x
07.80.+x
出版日期: 1991-02-01
引用本文:
GAO Yuzun*;SUN Guiru*;ZHANG Tonghe;JI Chengzhou;YANG Janhua. In situ Observation of Mo Implanted HI3 Steel by Transmission Electron Microscopy[J]. 中国物理快报, 1991, 8(2): 82-85.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I2/82
[1]
YIN Xiao-Ming;SONG Yuan-Hong;WANG You-Nian. Influence of Incident Velocity on the Penetration for C20 Clusters Moving through Oxides
[2]
ZHAN Mei-Qiong;Zhang Dong-Ping;TAN Tian-Ya;HE Hong-Bo;SHAO Jian-Da;FAN Zheng-Xiu. optical, Structural and Laser-Induced Damage Threshold Properties of HfO2 Thin Films Prepared by Electron Beam Evaporation
[3]
CHEN Feng;HU Hui;ZHANG Jian-Hua;LIU Xiang-Dong;XIA Hui-Hao;SHI Bo-Rong;WANG Ke-Ming. Range and Annealing Behaviour of Pb+ Ion-Implanted into LiNbO3 Crystals at Moderate Energies
[4]
JIANG Chang-Zhong;P. Morin;N. Rosenberg. Energy Filtering and Coaxial Detection of the Backscattered Electrons in Scanning Electron Microscope
[5]
ZHU Sheng-yun;LUO Qi;FAN Zhi-guo;WANG Chun-rui;ZHENG Sheng-nan;GOU Zhen-hui;LI An-li;QIAN Jia-yu. Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation
[6]
QIAN Yujun;PAN Bailiang;YAO Zhixin. Experimental Study on Copper Vapor Laser-Induced B-Doping in Si-Substrate
[7]
SHEN Guangjun;HAN Yongsheng;JIN Jirong;JIN Xin;JI Helin;YAO Xixian;FAN Zhanguo. Formation and Growth of Stacking Fault in YBCO by Electron Irradiation
[8]
TIAN Renhe. Effects of H+ -Implantation on the Formation of Secondary Defects in Self-Implanted Si(100)
[9]
SHI Yi;WU Fengmei;ZHENG Youdou;KOji SUMINO*. Photoexcitation and Decay of Higher Order Bands in Neutron Irradiated Silicon
[10]
ZHU Shengyun;ZHENG Shengnan;LI Anli;HUANG Hanchen;LI Donghong;XU Guoji
. Radiation Damage in bcc Metal Nb Studied by Perturbed Angular Correlation and Positron Annihilation Techniques
[11]
GONG Yunming;ZENG Haishan. Probe-Hole Field Emission Microscope System Controlled by Computer
[12]
LI Zongquan;SHEN Hui;QIN Yong. GROWTH STEPS ON Pt(110)
[13]
GONG Yunming. SURFACE SELF-DIFFUSION ANISOTROPY OF TUNGSTEN ATOMS ON W(112) PLANE
[14]
WU Zhenglong;YANG Bairui. EFFECTS OF OH- IONS ON THE FORMATION AND THERMAL DECAY PROPERTIES OF F-AGGREGATE CENTERS IN LIGHTLY DOPED LiF: OH-
1991, Vol. 8 
