Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells
XU Shijie1,2 , JIANG Desheng1 , LI Guohua1 , ZHANG Yaohui1 , LUO Jinsheng2
1 National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Acadcniia Sinica. Beijing 100083
2 Department of Electronic Engineering, Xi’an Jiaotong University, Xi’an 710049
Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells
XU Shijie1,2 ;JIANG Desheng1 ;LI Guohua1 ;ZHANG Yaohui1 ;LUO Jinsheng2
1 National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Acadcniia Sinica. Beijing 100083
2 Department of Electronic Engineering, Xi’an Jiaotong University, Xi’an 710049
关键词 ：
78.55.-m ,
71.35.+z
Abstract ： We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al0.35 Ga0.65 As/GaAs (50/40/100Å) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. The minimum level splitting is about 2.5meV.
Key words ：
78.55.-m
71.35.+z
出版日期: 1993-07-01
引用本文:
XU Shijie;JIANG Desheng;LI Guohua;ZHANG Yaohui;LUO Jinsheng. Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells[J]. 中国物理快报, 1993, 10(7): 433-436.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1993/V10/I7/433
[1]
YANG Jian;QIU Tai;SHEN Chun-Ying. New BCN Fibres for Strong Ultraviolet and Visible Light Luminescence
[2]
LI Guang-Min;LI-Lan;WANG Da-Jian;ZHANG Xiao-Song;TAO Yi. Effect of Al3+ on Photoluminescence Properties of Eu3+ -Doped BaZr(BO3 )2 Phosphors
[3]
WANG Da-Jian;WANG Ji-Lei;LI Lan. Colour Tuning of Single Host Phosphors for White Light by Al Addition
[4]
FANG Ying-Cui;ZHANG Zhuang-Jian;SHEN Jie;LU Ming. Photoluminescence from Electron-Beam Deposited CeO2 Thin Film after High Temperature Thermal Annealing
[5]
DAI Shi-Xun;ZHANG Xiang-Hua;XU Tie-Feng;SHEN Xiang;WANG Xun-Shi;NIE Qiu-Hua. High Efficiency Infrared-to-Visible Upconversion Emission in Er3+ ,Yb3+ , and Ho3+ Codoped Tellurite Glasses
[6]
QIAN Bo;CHEN San;CEN Zhan-Hong;CHEN Kun-Ji;LIU Yan-Song;XU Jun;MA Zhong-Yuan;LI Wei;HUANG Xin-Fan. Step-by-Step Laser Crystallization of Amorphous Si:H/SiNx :H Multilayer for Active Layer in Microcavities
[7]
ZHANG Qin-Yuan; YANG Gang-Feng;JIANG Zhong-Hong;W. X. Que. Structural and Luminescence Properties of Transparent Nanocrystalline ZrO2 :Er3+ Films
[8]
SHAO Jia-Ping;HAN Yan-Jun;WANG Lai;JIANG Yang;XI Guang-Yi;LI Hong-Tao;ZHAO Wei;LUO Yi. Improved Surface Characteristics and Contact Performance of Epitaxial p-AlGaN by a Chemical Treatment Process
[9]
LI Xin-Hua;XU Jia-Yue;JIN Min;SHEN Hui;LI Xiao-Min. Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method
[10]
XUE De-Sheng;GONG Yu. Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition
[11]
QIN Qi;GUO Li-Wei;ZHOU Zhong-Tang;CHEN Hong;DU Xiao-Long;MEI Zeng-Xia;JIA Jin-Feng;XUE Qi-Kun;ZHOU Jun-Ming. Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases
[12]
DONG Guo-Yi;ZHENG Yi-Bo;LIN Lin;DOU Jun-Hong;WEI Zhi-Ren;YANG Shao-Peng;FU Guang-Sheng;LI Xiao-Wei. Photoluminescence Mechanism of ZnO:Zn Investigated by Microwave Dielectric Spectrometry
[13]
QU Yu-Hua;JIANG De-Sheng;WU Dong-Hai;NIU Zhi-Chuan;SUN Zheng. Optical Properties of Highly Strained GaInAs/GaAs Quantum Wells Grown by Sb Assistance
[14]
JI Dong-Mei;HUANG Zheng-Xi;XIA An-Dong. Detection of Fluorescence from Single Chlorophyll a Molecules Absorbed on Glass Surface
[15]
Vijay Singh;ZHU Jun-Jie;T. K. Gundu Rao;Manoj Tiwari;PAN Hong-Cheng. Luminescence and ESR Studies of CaS:Dy Phosphor
1993, Vol. 10 
