Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition
LI Dong-Sheng, CHEN Hong, YU Hong-Bo, ZHENG Xin-He, HUANG Qi, ZHOU Jun-Ming
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition
LI Dong-Sheng;CHEN Hong;YU Hong-Bo;ZHENG Xin-He;HUANG Qi;ZHOU Jun-Ming
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
81.15.Gh ,
68.37.Ps
Abstract ： Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapour deposition (MOCVD) under various conditions. The surface morphologies of epitaxial films are studied by atomic force microscopy. The pit density and size both decrease with the increasing growth temperature, decreasing growth pressure or V/III ratio, while the roughness of the surface increases. Formation mechanisms of the pits in the films are discussed.
Key words ：
81.15.Gh
68.37.Ps
出版日期: 2004-05-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
68.37.Ps
(Atomic force microscopy (AFM))
引用本文:
LI Dong-Sheng;CHEN Hong;YU Hong-Bo;ZHENG Xin-He;HUANG Qi;ZHOU Jun-Ming. Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition[J]. 中国物理快报, 2004, 21(5): 970-971.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I5/970
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