Fast Growth of Polycrystalline Film in SiCl4 /H2 Plasma
HUANG Rui, LIN Xuan-Ying, YU Yun-Peng, LIN Kui-Xun, WEI Jun-Hong, YU Chu-Ying, WANG Zhao-Kui
Department of Physics, Shantou University, Shantou 515063
Fast Growth of Polycrystalline Film in SiCl4 /H2 Plasma
HUANG Rui;LIN Xuan-Ying;YU Yun-Peng;LIN Kui-Xun;WEI Jun-Hong;YU Chu-Ying;WANG Zhao-Kui
Department of Physics, Shantou University, Shantou 515063
关键词 ：
81.15.Gh ,
82.33.Xj ,
68.35.Rh
Abstract ： We report the discovery of fast growth of polycrystalline silicon films under low temperature of 200-300°C from SiCl4 /H2 mixture gases by plasma enhanced chemical vapour deposition technique. The deposition rate strongly depends not only on the rf power and the flow ratio of H2 /SiCl4 , but also on the substrate temperature, while the crystalline fraction is mainly affected by both the rf power and the flow ratio of H2 /SiCl4 . The high film-growth rate is due to the enhancement of the gas-phase reaction in SiCl4 /H2 plasma. By means of adjusting the matching relation between the flow ratio of H2 /SiCl4 and rf power, and optimizing the substrate temperature, we obtain the polycrystalline silicon films deposited at a higher deposition rate over 3.5Å/s, with a crystalline fraction of 75% and an average crystallite size of 400-500 nm in diameter.
Key words ：
81.15.Gh
82.33.Xj
68.35.Rh
出版日期: 2004-06-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
82.33.Xj
(Plasma reactions (including flowing afterglow and electric discharges))
68.35.Rh
(Phase transitions and critical phenomena)
引用本文:
HUANG Rui;LIN Xuan-Ying;YU Yun-Peng;LIN Kui-Xun;WEI Jun-Hong;YU Chu-Ying;WANG Zhao-Kui. Fast Growth of Polycrystalline Film in SiCl4 /H2 Plasma[J]. 中国物理快报, 2004, 21(6): 1168-1170.
4 /H2 Plasma. Chin. Phys. Lett., 2004, 21(6): 1168-1170.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I6/1168
[1]
YONG Zhen-Zhong;GONG Jin-Long;WANG Zhen-Xia;ZHU Zhi-Yuan;HU Jian-Gang;PAN Qiang-Yan. Field Emission Enhancement of Carbon Nanotubes by Surface Modification
[2]
LI Meng-Ke;WANG De-Zhen;SHI Feng;DING Sheng;JIN Hong. Growth and Characterization of Trumpet-Shaped ZnO Microtube Arrays on Si Substrates
[3]
WANG Jian-Feng;ZHANG Bao-Shun;ZHANG Ji-Cai;ZHU Jian-Jun;WANG Yu-Tian;CHEN Jun; LIU Wei;JIANG De-Sheng;YAO Duan-Zheng; YANG Hui. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer
[4]
WU Nan-Chun;XIA Yi-Ben;TAN Shou-Hong;WANG Lin-Jun;LIU Jian-Min;SU Qing-Feng. Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films
[5]
CAO Yu-Lian;LIAN Peng;MA Wen-Quan;WANG Qing;WU Xu-Ming;HE Guo- Rong;LI Hui;WANG Xiao-Dong;SONG Guo-Feng;CHEN Liang-Hui. Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser
[6]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching
[7]
WANG Bao-Zhu;WANG Xiao-Liang;HU Guo-Xin;RAN Jun-Xue;WANG Xin-Hua;GUO Lun-Chun;XIAO Hong-Ling;LI Jian-Ping;ZENG Yi-Ping;LI Jin-Min;WANG Zhan-Guo. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices
[8]
LU Hong-Liang;LI Yan-Bo;XU Min;DING Shi-Jin;SUN Liang;ZHANG Wei;WANG Li-Kang. Characterization of Al2 O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition
[9]
ZHOU Bing-Qing;LIU Feng-Zhen;ZHANG Qun-Fang;XU Ying;ZHOU Yu-Qin;LIU Jin-Long;ZHU Mei-Fang. Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters
[10]
SUN Jian;BAI Yi-Zhen;YANG Tian-Peng;XU Yi-Bin;WANG Xin-Sheng;DU Guo-Tong;WU Han-Hua. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films
[11]
XIA Dong-Yan;DAI Lun;XU Wan-Jin;YOU Li-Ping;ZHANG Bo-Rui;RAN Guang-Zhao;QIN Guo-Gang;. Synthesis and PL Properties of ZnSe Nanowires with Zincblende and Wurtzite Structures
[12]
WANG Xiao-Ping;WANG Li-Jun;ZHANG Bing-Lin;YAO Ning;ZANG Qi-Ren;CHEN Jun;DUAN Xin-Chao. An Effective Method for Improvement of Field Electron Emission Site Density and Uniformity of Amorphous Carbon Thin Films
[13]
YUE Rui-Feng;YAO Yong-Zhao;LIU Li-Tian. Blue-Green Light Emission from a-SiCx :H-Based Fabry--Perot Microcavities
[14]
WU Xin-Tian. Two-Dimensional Saddle Point Equation of Ginzburg--Landau Hamiltonian for the Diluted Ising Model
[15]
ZHU Xue-Liang;GUO Li-Wei;YU Nai-Sen;PENG Ming-Zeng;YAN Jian-Feng;GE Bing-Hui;JIA Hai-Qiang;
CHEN Hong;ZHOU Jun-Ming. Characteristics of High In-Content InGaN Alloys Grown by MOCVD
2004, Vol. 21 
