Fast Growth of Polycrystalline Film in SiCl4 /H2 Plasma
HUANG Rui, LIN Xuan-Ying, YU Yun-Peng, LIN Kui-Xun, WEI Jun-Hong, YU Chu-Ying, WANG Zhao-Kui
Department of Physics, Shantou University, Shantou 515063
Fast Growth of Polycrystalline Film in SiCl4 /H2 Plasma
HUANG Rui;LIN Xuan-Ying;YU Yun-Peng;LIN Kui-Xun;WEI Jun-Hong;YU Chu-Ying;WANG Zhao-Kui
Department of Physics, Shantou University, Shantou 515063
关键词 :
81.15.Gh ,
82.33.Xj ,
68.35.Rh
Abstract : We report the discovery of fast growth of polycrystalline silicon films under low temperature of 200-300°C from SiCl4 /H2 mixture gases by plasma enhanced chemical vapour deposition technique. The deposition rate strongly depends not only on the rf power and the flow ratio of H2 /SiCl4 , but also on the substrate temperature, while the crystalline fraction is mainly affected by both the rf power and the flow ratio of H2 /SiCl4 . The high film-growth rate is due to the enhancement of the gas-phase reaction in SiCl4 /H2 plasma. By means of adjusting the matching relation between the flow ratio of H2 /SiCl4 and rf power, and optimizing the substrate temperature, we obtain the polycrystalline silicon films deposited at a higher deposition rate over 3.5Å/s, with a crystalline fraction of 75% and an average crystallite size of 400-500 nm in diameter.
Key words :
81.15.Gh
82.33.Xj
68.35.Rh
出版日期: 2004-06-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
82.33.Xj
(Plasma reactions (including flowing afterglow and electric discharges))
68.35.Rh
(Phase transitions and critical phenomena)
引用本文:
HUANG Rui;LIN Xuan-Ying;YU Yun-Peng;LIN Kui-Xun;WEI Jun-Hong;YU Chu-Ying;WANG Zhao-Kui. Fast Growth of Polycrystalline Film in SiCl4 /H2 Plasma[J]. 中国物理快报, 2004, 21(6): 1168-1170.
HUANG Rui, LIN Xuan-Ying, YU Yun-Peng, LIN Kui-Xun, WEI Jun-Hong, YU Chu-Ying, WANG Zhao-Kui. Fast Growth of Polycrystalline Film in SiCl4 /H2 Plasma. Chin. Phys. Lett., 2004, 21(6): 1168-1170.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I6/1168
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