Electrical and Optical Properties of InGaN/AlGaN Double
Heterostructure Blue Light-Emitting Diodes
SHEN Bo, SHI Hong-Tao, ZHANG Rong, CHEN Zhi-Zhong, ZHENG You-Dou
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Electrical and Optical Properties of InGaN/AlGaN Double
Heterostructure Blue Light-Emitting Diodes
SHEN Bo;SHI Hong-Tao;ZHANG Rong;CHEN Zhi-Zhong;ZHENG You-Dou
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
78.60.Fi ,
73.40.Kp
Abstract ： Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes were investigated. Measurement of the forward bias current--voltage behaviour of the device demonstrated a departure from the Shockley model of a p--n diode, and it was observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunnelling. Electroluminescence experiments indicated that there was a main emission band around 2.80 eV and a relatively weaker peak at 3.2 eV. A significant blueshift of the optical emission band was observed, which was consistent with the tunnelling character of electrical characteristics. Furthermore, the degradation in I-V characteristics and the low resistance ohmic short of the device were observed.
Key words ：
78.60.Fi
73.40.Kp
出版日期: 2001-02-01
:
78.60.Fi
(Electroluminescence)
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
SHEN Bo;SHI Hong-Tao;ZHANG Rong;CHEN Zhi-Zhong;ZHENG You-Dou. Electrical and Optical Properties of InGaN/AlGaN Double
Heterostructure Blue Light-Emitting Diodes[J]. 中国物理快报, 2001, 18(2): 283-285.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I2/283
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2001, Vol. 18 
