Temperature-Induced Switching-Over of the Luminescence Transitions in GaInNAs/GaAs Quantum Wells
BIAN Li-Feng, JIANG De-Sheng, LIANG Xiao-Gan, LU Shu-Long
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Temperature-Induced Switching-Over of the Luminescence Transitions in GaInNAs/GaAs Quantum Wells
BIAN Li-Feng;JIANG De-Sheng;LIANG Xiao-Gan;LU Shu-Long
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
77.84.Bw ,
76.60.Jv ,
78.55.-m
Abstract ： Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the band tail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature.
Key words ：
77.84.Bw
76.60.Jv
78.55.-m
出版日期: 2004-03-01
:
77.84.Bw
(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
76.60.Jv
78.55.-m
(Photoluminescence, properties and materials)
引用本文:
BIAN Li-Feng;JIANG De-Sheng;LIANG Xiao-Gan;LU Shu-Long. Temperature-Induced Switching-Over of the Luminescence Transitions in GaInNAs/GaAs Quantum Wells[J]. 中国物理快报, 2004, 21(3): 548-551.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I3/548
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2004, Vol. 21 
