Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer
HUANG Jin-Song1, LUO Xiang-Dong1, YANG Xu-Dong1, SUN Zheng1, SUN Bao-Quan1, XU Zhong-Ying1, GE Wei-Kun2
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, Hong Kong University of Sciences and Technology, Hong Kong
Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, Hong Kong University of Sciences and Technology, Hong Kong
Abstract： We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers. By measuring the exciton decay time as a function of the monitored emission energy at different temperatures, we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 120K. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results
HUANG Jin-Song;LUO Xiang-Dong;YANG Xu-Dong;SUN Zheng;SUN Bao-Quan;XU Zhong-Ying;GE Wei-Kun. Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer[J]. 中国物理快报, 2004, 21(12): 2529-2532.
HUANG Jin-Song, LUO Xiang-Dong, YANG Xu-Dong, SUN Zheng, SUN Bao-Quan, XU Zhong-Ying, GE Wei-Kun. Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer. Chin. Phys. Lett., 2004, 21(12): 2529-2532.
2004, Vol. 21 
