Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation
ZHOU You-Hua 1,2, YANG Guang1, ZHANG Zhi-Hua3, LONG Hua1, DUAN Xiao-Feng3, GAO Yi-Hua1, ZHENG Qi-Guang1, LU Pei-Xiang1
1Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
2School of Physics and Information Engineering, Jianghan University, Wuhan 430056
3Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation
1Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
2School of Physics and Information Engineering, Jianghan University, Wuhan 430056
3Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
摘要Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition (FsPLD) with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV--VIS--NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85eV. The two most intense lines of Raman scattering peaked at 181.3cm-1 and 235.6cm-1 for the film on fused quartz, and at 191.2cm-1 and 243.8cm-1 for the film on Si (100), are observed.
Abstract：Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition (FsPLD) with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV--VIS--NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85eV. The two most intense lines of Raman scattering peaked at 181.3cm-1 and 235.6cm-1 for the film on fused quartz, and at 191.2cm-1 and 243.8cm-1 for the film on Si (100), are observed.
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2007, Vol. 24 
