Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Films
Abdul Faheem Khan1, Mazhar Mehmood1, A. M. Rana2, M. T. Bhatti2, A. Mahmood3
1National Centre for Nanotechnology, Department of Chemical and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Islamabad 45650, Pakistan2Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan3NILOP, Islamabad 45650, Pakistan
Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Films
Abdul Faheem Khan1, Mazhar Mehmood1, A. M. Rana2, M. T. Bhatti2, A. Mahmood3
1National Centre for Nanotechnology, Department of Chemical and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Islamabad 45650, Pakistan2Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan3NILOP, Islamabad 45650, Pakistan
摘要Tin oxide (SnO2) thin films are deposited by rf-magnetron sputtering and annealed at various temperatures in the range of 100-500°C for 15min. Raman spectra of the annealed films depict the formation of a small amount of SnO phase in the tetragonal SnO2 matrix, which is verified by x-ray diffraction. The average particle size is found to be about 20-30nm, as calculated from x-ray peak broadening and SEM images. Various optical parameters such as optical band gap energy, refractive index, optical conductivity, carrier mobility, carrier concentration etc. are determined from the optical transmittance and reflectance data recorded in the wavelength range 250-2500nm. The results are analyzed and compared with the data in the literature.
Abstract：Tin oxide (SnO2) thin films are deposited by rf-magnetron sputtering and annealed at various temperatures in the range of 100-500°C for 15min. Raman spectra of the annealed films depict the formation of a small amount of SnO phase in the tetragonal SnO2 matrix, which is verified by x-ray diffraction. The average particle size is found to be about 20-30nm, as calculated from x-ray peak broadening and SEM images. Various optical parameters such as optical band gap energy, refractive index, optical conductivity, carrier mobility, carrier concentration etc. are determined from the optical transmittance and reflectance data recorded in the wavelength range 250-2500nm. The results are analyzed and compared with the data in the literature.
Abdul Faheem Khan;Mazhar Mehmood;A. M. Rana;M. T. Bhatti;A. Mahmood. Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Films[J]. 中国物理快报, 2009, 26(7): 77803-077803.
Abdul Faheem Khan, Mazhar Mehmood, A. M. Rana, M. T. Bhatti, A. Mahmood. Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Films. Chin. Phys. Lett., 2009, 26(7): 77803-077803.
[1] Jiang J C et al 2002 Thin Solid Films 411203 [2] Wang S et al 2006 Mater. Lett. 60 1706 [3] Wan C F et al 1989 J. Electrochem. Soc. 136 1459 [4] Dieguez A et al 1996 Sensors Actuators B311 [5] Morales C et al 2008 Microelect. J. 39 586 [6] Rusu G I et al 2005 J. Optoelect. Adv. Mater. 7 829 [7] Kim H et al 2008 Thin Solid Films 516 5052 [8] Bhatti M T et al 2004 J. Res. Sci. B. Z. Univ. 15 369 [9] Kravets V G 2007 Opt. Spectrosc. 103 766 [10] Sun S H et al 2003 Chem. Phys. Lett. 376103 [11] Macedo C C S et al 2006 J. Braz. Chem. Soc. 17 1291 [12] Geurts J et al 1984 Thin Solid Films 121217 [13] Thangadurai P et al 2005 J. Phys. Chem. Sol. 66 1621 [14] Touskova J et al 1995 Sol. Energy Mater. Sol.Cells\, 37\,357 [15] Jouhannaud J et al 2008 J. Sol. Stat. Chem. 181 1439 [16] Flores A O et al 2006 Revista Mexicana DeFisica 52 15 [17] Aswal D K and Gupta S K 2008 Science andTechnology of Chemiresistor Gas Sensors (Nova Publishers) [18] Sharmaa S K et al 2009 J. Alloys Compd. 471 244 [19] Nadeem M Y and Ahmad W 2000 Turk. J. Phys. 24 641 [20] Smestad G P 2002 Optoelectronics of Solar Cells(Washington: SPIE Press) p 21 [21] Ndukwe I C 1996 Sol. Energy Mater. Sol. Cells 40 123 [22] Fanderlik I 1983 Optical Properties of Glasses(New York: Elsevier) p 29 [23] Lee J 2008 Thin Solid Films 516 1386
2009, Vol. 26 
