摘要A high-Al-content AlGaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire by low pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity, and twisted mosaicity on the conditions of the AlGaN epilayer deposition is evaluated. An AlGaN epilayer with favourable surface morphology and crystal quality is deposited on a 20nm low-temperature-deposited AlN buffer at a low V/III flow ratio of 783 and at a low reactor pressure of 100Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.
Abstract：A high-Al-content AlGaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire by low pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity, and twisted mosaicity on the conditions of the AlGaN epilayer deposition is evaluated. An AlGaN epilayer with favourable surface morphology and crystal quality is deposited on a 20nm low-temperature-deposited AlN buffer at a low V/III flow ratio of 783 and at a low reactor pressure of 100Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.
WANG Xiao-Lan;ZHAO De-Gang;YANG Hui;LIANG Jun-Wu. Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition[J]. 中国物理快报, 2007, 24(3): 774-777.
WANG Xiao-Lan, ZHAO De-Gang, YANG Hui, LIANG Jun-Wu. Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition. Chin. Phys. Lett., 2007, 24(3): 774-777.
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2007, Vol. 24 
