2007, Vol. 24(3): 774-777 DOI: | ||
Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition | ||
WANG Xiao-Lan, ZHAO De-Gang, YANG Hui, LIANG Jun-Wu | ||
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing | ||
收稿日期 2006-11-21 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Zhang J P et al [2] Yasan A et al %, McClintock R, Mayes K, Darvish S R, Kung P and Razeghi M [3] Adivarahan V et al %, Wu S, Chitnis A, Pachipulusu R, Mandavilli V, [4] Zhou S Q, Wu M F and Yao S D 2005 Chin. Phys. Lett. 22 [5] Yoshida S, Misawa S and Gonda S 1982 J. Appl. Phys. 53 [6] Koide Y et al %, Itoh H, Khan M R H, Hiramatsu K, Sawaki N and Akasaki I [7] Ito K, Hiramatsu K, Amano H and Akasaki I 1990 J. Crystal [8] Amano H et al [9] Zhou Y G et al %, Zhang R, Li W P, Shen B, Chen P, Chen Z Z, Gu S L, Shi Y, [10] Wang B Z et al %, Wang X L, Hu G X, Ran J X, Wang X H, Guo L C, Xiao H L, [11] Kondratyev A V et al %, Talalaev R A, Lundin W V, Sakharov A V, [12] Zhao D G et al %, Zhu J J, Liu Z S, Zhang S M, Yang Hui and Jiang D S [13] Ohba Y and Sato R 2000 J. Crystal Growth 221 258 [14] Kim S et al %, Oh J, Kang J, Kim D, Won J, Kim J W and Cho H [15] Zhao D G et al [16] Coltrin M E, Creighton J R and Mitchell C C 2006 J. Crystal |
||