Organic Light-Emitting Devices with a LiF Hole Blocking Layer
LIAN Jia-Rong, YUAN Yong-Bo, ZHOU Xiang
State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Lab of Display Material and Technology, Sun Yat-Sen University, Guangzhou 510275
Organic Light-Emitting Devices with a LiF Hole Blocking Layer
LIAN Jia-Rong;YUAN Yong-Bo;ZHOU Xiang
State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Lab of Display Material and Technology, Sun Yat-Sen University, Guangzhou 510275
摘要We introduce a thin LiF layer into tris-8-hydroxyquinoline aluminium (Alq3) based bilayer organic light-emitting devices to block hole transport. By varying the thickness and position of this LiF layer in Alq3, we obtain an lectroluminescent efficiency increase by a factor of two with respect to the control devices without a LiF blocking layer. By using a 10nm dye doped Alq3 sensor layer, we prove that LiF can block holes and excitons effectively. Experimental results suggest that the thin LiF layer may be a good hole and exciton blocking layer.
Abstract:We introduce a thin LiF layer into tris-8-hydroxyquinoline aluminium (Alq3) based bilayer organic light-emitting devices to block hole transport. By varying the thickness and position of this LiF layer in Alq3, we obtain an lectroluminescent efficiency increase by a factor of two with respect to the control devices without a LiF blocking layer. By using a 10nm dye doped Alq3 sensor layer, we prove that LiF can block holes and excitons effectively. Experimental results suggest that the thin LiF layer may be a good hole and exciton blocking layer.
[1] Tang C W and Van Slyke S A 1987 Appl. Phys. Lett. 51913 [2] Hung L S and Chen C H 2002 Mater. Sci. Engin. R 39 143 [3] Tang C W, Van Slyke S A and Chen C H 1989 J. Appl. Phys. 65 3610 [4] Hung L S, Tang C W and Mason M G 1997 Appl. Phys. Lett. 70 152 [5] Xie Z Y, Hung L S and Lee S T 2001 Appl. Phys. Lett. 79 1048 [6] Zhou X, Lian J R, Liu P Y, Cao L F and Xu N S Chinese PatentApplication 200410026739.6 [7] Lian J R, Yuan Y B, Zhang J, Pang H Q, Zhou Y F and Zhou X Theabstracts of the 6th International Conference on Electroluminescence ofMolecular Materials and Related Phenomena (ICEL-6), P9.109 6--10August 2006 Hong Kong [8] Kim Y M, Lee J W, Jung J H, Paek K K, Sung M Y, Kim J K and Ju B K2006 IEEE Electron Device Lett. 27 558 [9] Zhu F R, Low B L, Zhang K R and Chua S J 2001 Appl. Phys.Lett. 79 1205 [10] Li C N, Xiao B W and Liu S Y 2001 Chin. Phys. Lett. 18120 [11] Zhang S T, Wang Z J, Zhao J M, Zhan Y Q, Wu Y, Zhou Y C, Ding X Mand Hou X Y 2004 Appl. Phys. Lett. 84 2916 [12] Mori T, Fujikawa H, Tokito S and Taga Y 1998 Appl. Phys.Lett. 73 2763