Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer
ZHOU Mei1, ZHAO De-Gang2
1Department of Physics, China Agriculture University, Beijing 1000832State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer
ZHOU Mei1;ZHAO De-Gang2
1Department of Physics, China Agriculture University, Beijing 1000832State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
摘要We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type AlGaN window layer is added on the conventional n--GaN/n+-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the AlGaN window layer.
Abstract：We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type AlGaN window layer is added on the conventional n--GaN/n+-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the AlGaN window layer.
(Optoelectronic device characterization, design, and modeling)
引用本文:
ZHOU Mei;ZHAO De-Gang. Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer[J]. 中国物理快报, 2007, 24(6): 1745-1748.
ZHOU Mei, ZHAO De-Gang. Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer. Chin. Phys. Lett., 2007, 24(6): 1745-1748.
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2007, Vol. 24 
