2007, Vol. 24(6): 1745-1748 DOI: | ||
Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer | ||
ZHOU Mei1, ZHAO De-Gang2 | ||
1Department of Physics, China Agriculture University, Beijing 1000832State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 | ||
收稿日期 2007-03-10 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Carrano J C, Grudowski P A, Eiting C J, Dupuis R D and Campbell J [2] Carrano J C, Li T, Brown D L, Grudowski P A, Eiting C J, Dupuis R [3] Chen Q, Yang J W, Osinsky A, Gangopadhyay S, Lim B, Anwar M Z, [4] Katz O, Garber V, Meyler B, Bahir G and Salzman J 2002 Appl. [5] Osinsky A, Gangopadhyay S, Gaska R, Williams B, Khan M A, [6] Xu G Y, Salvador A, Kim W, Fan Z, Lu C, Tang H, Morkoc H, Smith G, [7] Clintock R M, Mayes K, Yasan A, Shiell D, Kung P and Razeghi M [8] Sze S M 1981 Physics of Semiconductor Devices 2nd [9] Lee S R, Wright A F, Crawford M H, Petersen G A, Han J and Biefeld [10] The freeware program `AMPS-1D' is supplied by the Electronic |
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