High Quality AlN with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
REN Fan, HAO Zhi-Biao, ZHANG Chen, HU Jian-Nan, LUO Yi
Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, and Department of Electronic Engineering, Tsinghua University, Beijing 100084
High Quality AlN with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
REN Fan, HAO Zhi-Biao, ZHANG Chen, HU Jian-Nan, LUO Yi
Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, and Department of Electronic Engineering, Tsinghua University, Beijing 100084
We report an AlN epi-layer grown on sapphire by plasma-assisted molecular beam epitaxy with a thin interlayer structure. The effects of growth mode on threading dislocations (TDs) and surface morphology are studied. Then an interlayer structure grown under a V/Ⅲ ratio of 1 is adopted to improve the AlN crystalline quality. By optimizing the thickness of the interlayer, the TD density and surface roughness can be reduced simultaneously.
We report an AlN epi-layer grown on sapphire by plasma-assisted molecular beam epitaxy with a thin interlayer structure. The effects of growth mode on threading dislocations (TDs) and surface morphology are studied. Then an interlayer structure grown under a V/Ⅲ ratio of 1 is adopted to improve the AlN crystalline quality. By optimizing the thickness of the interlayer, the TD density and surface roughness can be reduced simultaneously.
(Experimental determination of defects by diffraction and scattering)
引用本文:
REN Fan;HAO Zhi-Biao;ZHANG Chen;HU Jian-Nan;LUO Yi. High Quality AlN with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy[J]. 中国物理快报, 2010, 27(6): 68101-068101.
REN Fan, HAO Zhi-Biao, ZHANG Chen, HU Jian-Nan, LUO Yi. High Quality AlN with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy. Chin. Phys. Lett., 2010, 27(6): 68101-068101.
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