P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy
ZHANG Guo-yi, YANG Zhi-jian, TONG Yu-zhen, JIN Si-xuan, DANG Xiao-zhong, WANG Shu-min
Department of Physics, Mesoscopic Physics Laboratory, Peking University, Beijing 100871
P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy
ZHANG Guo-yi;YANG Zhi-jian;TONG Yu-zhen;JIN Si-xuan;DANG Xiao-zhong;WANG Shu-min
Department of Physics, Mesoscopic Physics Laboratory, Peking University, Beijing 100871
关键词 ：
81.15.Gh ,
68.55.Ce
Abstract ： P-type GaN was grown on AI3 O2 substrate by low pressure metalorganic vapor phase epitaxy without any post treatment. The p-type conduction of as-grown GaN has the typical characteristics of a light-doped or high-compensation semiconductor, that is a hole concentration of 2.2 x 1017 cm-3 at 77K, which changes to n-type with an electron concentration of 2.7 x 1017 cm-3 at room temperature. After thermal annealing under a N2 ambient, it showed the characteristics of a heavy-doped semiconductor and the hole concentration was enhanced reaching a hole concentrations of 4.2 x 1017 at 77K and 5.7 x 1017 cm-3 at room temperature.
Key words ：
81.15.Gh
68.55.Ce
出版日期: 1997-08-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
68.55.Ce
引用本文:
ZHANG Guo-yi;YANG Zhi-jian;TONG Yu-zhen;JIN Si-xuan;DANG Xiao-zhong;WANG Shu-min. P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy[J]. 中国物理快报, 1997, 14(8): 637-640.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I8/637
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