Very Low Pressure Nucleation of Diamond on Mirror-Smooth Silicon in Hot Filament Chemical Vapor Deposition System
LIN Zhang-da (Zhangda Lin), CHEN Yan, CHEN Qi-jin, S. T. Lee*, Y. W. Lam*
Stake Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
*Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
Very Low Pressure Nucleation of Diamond on Mirror-Smooth Silicon in Hot Filament Chemical Vapor Deposition System
LIN Zhang-da (Zhangda Lin);CHEN Yan;CHEN Qi-jin;S. T. Lee*;Y. W. Lam*
Stake Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
*Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
Abstract： Under very low pressure (0.1 Torr) the high density nucleation of diamond on mirror-smooth silicon in hot filament-chemical vapor deposition system was obtained. The nucleation density of order of 1010-1011cm-2 was achieved, the same achievement which obtained in microwave plasma-chemical vapor deposition system with negative bias. In this paper the nucleation technique and the effect of low pressure on diamond nucleation were discussed in detail based on the molecular dynamics.
LIN Zhang-da (Zhangda Lin);CHEN Yan;CHEN Qi-jin;S. T. Lee*;Y. W. Lam*. Very Low Pressure Nucleation of Diamond on Mirror-Smooth Silicon in Hot Filament Chemical Vapor Deposition System[J]. 中国物理快报, 1996, 13(10): 750-752.
LIN Zhang-da (Zhangda Lin), CHEN Yan, CHEN Qi-jin, S. T. Lee*, Y. W. Lam*. Very Low Pressure Nucleation of Diamond on Mirror-Smooth Silicon in Hot Filament Chemical Vapor Deposition System. Chin. Phys. Lett., 1996, 13(10): 750-752.
1996, Vol. 13 
