Cubic Boron Nitride Films Formed by Thermally Assisted rf Plasma CVD
LIAO Kejun, WANG Wanlu
Department of Physics, Lanzhou University, Lanzhou 730000
Cubic Boron Nitride Films Formed by Thermally Assisted rf Plasma CVD
LIAO Kejun;WANG Wanlu
Department of Physics, Lanzhou University, Lanzhou 730000
关键词 ：
81.15.Gh ,
68.55.Gi
Abstract ： Cubic boron nitride films have been synthesized using thermally assisted rf plasma chemical vapour deposition (CVD) with a tungsten filament in the reactive gasses of B2 H6 and NH3 . The films obtained are of good quality and are characterized by transmission electron microscope, infrared absorption measurement and electron energy loss spectrometry. Experimental results showed that the structure and quality of cubic boron nitride films closely depend on the growth conditions of the films.
Key words ：
81.15.Gh
68.55.Gi
出版日期: 1995-01-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
68.55.Gi
引用本文:
LIAO Kejun;WANG Wanlu. Cubic Boron Nitride Films Formed by Thermally Assisted rf Plasma CVD[J]. 中国物理快报, 1995, 12(1): 58-60.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I1/58
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