Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam
Epitaxy with a GaP Decomposition Source

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	SHANG Xun-Zhong
	NIU Ping-Juan
	WU Shu-Dong
	WANG Wen-Xin
	GUO Li-Wei
	HUANG Qi
	ZHOU Jun-Ming

关键词 ： 81.15.Hi, 61.10.Nz, 78.55.Cr, 73.50.Ey

Abstract： Lattice-matched InGaP on GaAs (001) was successfully grown by solid-source molecular beam epitaxy with a GaP decomposition source. A 0.5-μm-thick InGaP epilayer shows photoluminescence peak energy as large as 1.991 eV at 15 K, the full width at half maximum as small as 9.4 meV and x-ray diffraction rocking curve linewidth as narrow as 25 arcsec. The electron mobilities of undoped and Si-doped InGaP layers obtained by Hall measurements are comparable to similar InGaP/GaAs heterojunction grown by solid-source molecular beam epitaxy with other sources or other growth techniques. The results reveal that the InGaP/GaAs heterojunction grown by the present growth way have great potential applications for semiconductor devices.

Key words： 81.15.Hi 61.10.Nz 78.55.Cr 73.50.Ey

出版日期: 2003-09-01

:	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	61.10.Nz
	78.55.Cr	(III-V semiconductors)
	73.50.Ey

引用本文:

SHANG Xun-Zhong;NIU Ping-Juan;WU Shu-Dong;WANG Wen-Xin;GUO Li-Wei;HUANG Qi;ZHOU Jun-Ming. Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam Epitaxy with a GaP Decomposition Source[J]. 中国物理快报, 2003, 20(9): 1616-1618.
SHANG Xun-Zhong, NIU Ping-Juan, WU Shu-Dong, WANG Wen-Xin, GUO Li-Wei, HUANG Qi, ZHOU Jun-Ming. Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam Epitaxy with a GaP Decomposition Source. Chin. Phys. Lett., 2003, 20(9): 1616-1618.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2003/V20/I9/1616