Abstract： Diamond-like carbon (DLC) films have been deposited onto Si substrates at substrate temperatures from 25°C to 400°C by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of sp3 carbon in the films is about 40% when the substrate temperature is below 300°C. With the increase of substrate temperature from 25°C to 400°C, the concentration of sp3 carbon decreases from 43% to 8%. In other words, sp3 carbon is graphitized into sp2 carbon when the substrate temperature is above 300°C. The results of x-ray diffraction and atomic force microscopy show that, with the increase of the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.
MEI Xian-Xiu;LIU Zhen-Min;MA Teng-Cai;DONG Chuang. Deposition of Diamond-Like Carbon Films by High-Intensity Pulsed
Ion Beam Ablation at Various Substrate Temperatures[J]. 中国物理快报, 2003, 20(9): 1619-1621.
MEI Xian-Xiu, LIU Zhen-Min, MA Teng-Cai, DONG Chuang. Deposition of Diamond-Like Carbon Films by High-Intensity Pulsed
Ion Beam Ablation at Various Substrate Temperatures. Chin. Phys. Lett., 2003, 20(9): 1619-1621.
2003, Vol. 20 
