Deposition of Er:Al2 O3 Films and Photoluminescence Characteristics
LI Cheng-Ren1,2 , SONG Chang-Lie2 , LI Shu-Feng2 , RAO Wen-Xiong2
1 Department of Physics, Liaoning Normal University, Dalian 116029
2 Department of Physics, Dalian University of Technology, Dalian 116024
Deposition of Er:Al2 O3 Films and Photoluminescence Characteristics
LI Cheng-Ren1,2 ;SONG Chang-Lie2 ;LI Shu-Feng2 ;RAO Wen-Xiong2
1 Department of Physics, Liaoning Normal University, Dalian 116029
2 Department of Physics, Dalian University of Technology, Dalian 116024
关键词 ：
81.15.Cd ,
78.20.-e
Abstract ： Er3+ -doped Al2 O3 films were deposited on silicon substrates by reactive closed-field unbalanced magnetron sputtering. The process parameters, such as target bias voltage, substrate bias voltage, O2 gas flows, sputtering gas pressure, were studied. The 1.53μm photoluminescence characteristics from Er3+ were measured. The relations among the PL peak intensity, annealing temperatures, and pump power were experimentally investigated.
Key words ：
81.15.Cd
78.20.-e
出版日期: 2003-09-01
:
81.15.Cd
(Deposition by sputtering)
78.20.-e
(Optical properties of bulk materials and thin films)
引用本文:
LI Cheng-Ren;SONG Chang-Lie;LI Shu-Feng;RAO Wen-Xiong. Deposition of Er:Al2 O3 Films and Photoluminescence Characteristics[J]. 中国物理快报, 2003, 20(9): 1613-1615.
2 O3 Films and Photoluminescence Characteristics. Chin. Phys. Lett., 2003, 20(9): 1613-1615.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I9/1613
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2003, Vol. 20 
