Photoluminescence Quenching of Porous Silicon by Molecule Adsorption
LI Xue-ping, YIN Feng, ZHANG Zhen-zong, XIAO Xu-rui
Institute of Photographic Chemistry, Chinese Academy of Sciences, Beijing 100101
Photoluminescence Quenching of Porous Silicon by Molecule Adsorption
LI Xue-ping;YIN Feng;ZHANG Zhen-zong;XIAO Xu-rui
Institute of Photographic Chemistry, Chinese Academy of Sciences, Beijing 100101
关键词 ：
78.55.-m ,
78.50.Ge ,
68.10.Jy
Abstract ： The photoluminescence of HNO3 chemically oxidized porous silicon can be easily quenched by organic adsorbates, and the ability of quenching was quantitatively estimated by two models- Langmuir adsorption isotherm and Stern-Volmer. A strong steric effect of organic adsorbates on the photoluminescence quenching of oxidized porous silicon was observed.
Key words ：
78.55.-m
78.50.Ge
68.10.Jy
出版日期: 1998-10-01
引用本文:
LI Xue-ping;YIN Feng;ZHANG Zhen-zong;XIAO Xu-rui. Photoluminescence Quenching of Porous Silicon by Molecule Adsorption[J]. 中国物理快报, 1998, 15(10): 756-757.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I10/756
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