Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance
WANG Ji-Min1,2, ZHANG Xiao-Zhong1,2**, PIAO Hong-Guang1,2, LUO Zhao-Chu1,2, XIONG Cheng-Yue1,2
1Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 2National Center for Electron Microscopy (Beijing), Tsinghua University, Beijing 100084
Abstract：We develop a non-volatile resistive switching device in a Si–SiO2–Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By applying a reading voltage in the range of Vt, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift Vt to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 103% at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.
2014, Vol. 31 
