Electroforming-Free and Highly Uniform Al2 O3 Resistive Random Access Memory by ALD-Based In Situ Hydrogen Plasma Treatment
WU Hua-Yu1 , ZHANG Jian1 , ZHANG Qi-Long1** , YANG Hui1 , LUO Ji-Kui2,3**
1 Department of Materials Science and Engineering, Zhejiang University, Hangzhou 3100272 Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 3100273 Institute of Material Research and Innovation, Bolton University, Deane Road Bolton BL3 5AB, United Kingdom
Abstract ：Al2 O3 resistive random access memory (RRAM) with electroforming-free characteristics, high stability and uniform properties is fabricated. The effect of the in situ hydrogen plasma enhanced treatment on the device performance is investigated. The dominated conduction mechanisms of the devices are ohmic behavior at low fields and space charge limited charge injection at high fields. The great improvement in the device properties is attributed to the hydrogen plasma treatment with the Al2 O3 film, and this simple while effective atomic layer deposition based plasma treatment process is expected to be useful for other RRAM material systems as well.
出版日期: 2014-04-24
:
73.40.Rw
(Metal-insulator-metal structures)
73.50.-h
(Electronic transport phenomena in thin films)
72.20.Jv
(Charge carriers: generation, recombination, lifetime, and trapping)
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2014, Vol. 31 
