Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells
ZHANG Xiao-Fu, LI Yu-Dong, GUO Qi** , LU Wu
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011
Abstract ：We investigate the photoluminescence (PL) emission from InGaN/GaN multiple quantum-well structures before and after 1 MeV electron irradiation. The PL peak intensity exhibits a slight enhancement after low-dose electron irradiation (2× 1013 e/cm2 ), and then decreases with the cumulative electron dose. Meanwhile, the full width at half maximum of the PL spectrum narrows after low-dose electron irradiation and widens when the irradiation dose is relatively high. With respect to the yellow photoluminescence, there is no significant change until the electron fluence has accumulated up to 1014 e/cm2 .
收稿日期: 2013-04-25
出版日期: 2013-11-21
:
61.80.-x
(Physical radiation effects, radiation damage)
72.20.Jv
(Charge carriers: generation, recombination, lifetime, and trapping)
78.55.Cr
(III-V semiconductors)
78.67.De
(Quantum wells)
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2013, Vol. 30 
