1Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 2National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621999 3State Key Laboratory of Low-Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter, Department of Physics, Tsinghua University, Beijing 100084
Abstract：Spinel (001)-orientated Mn$_{3}$O$_{4}$ thin films on Nb-doped SrTiO$_{3}$ (001) substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial film is well crystallized. In the film plane the orientation relationship between the film and the substrate is [100]Mn$_{3}$O$_{4}$$\parallel$[110] Nb-doped SrTiO$_{3}$. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn$_{3}$O$_{4}$ might be a promising candidate for the resistive random access memory devices.
2016, Vol. 33 
