中国物理快报  2016, Vol. 33 Issue (06): 67203-067203    DOI: 10.1088/0256-307X/33/6/067203
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Gate-Voltage-Induced Magnetization Reversal and Tunneling Anisotropic Magnetoresistance in a Single Molecular Magnet with Temperature Gradient
Shu-Jing Li1, Yu-Ying Zhang1, Wei-Ping Xu1,2, Yi-Hang Nie1**
1Institute of Theoretical Physics, Shanxi University, Taiyuan 030006
2School of Applied Science, Taiyuan University of Science and Technology, Taiyuan 030024