Abstract：The electroforming process of Ti/HfOx stacked RRAM devices is removed via the combination of low temperature atomic layer deposition and post metal annealing. The Pt/Ti/HfOx/Pt RRAM devices show a forming-free bipolar resistive switching behavior. By x-ray photoelectron emission spectroscopy analysis, it is found that there are many oxygen vacancies and nonlattice oxygen pre-existing in the HfOx layer that play a key role in removing the electroforming process. In addition, when the thickness ratio of the Ti and HfOx layer is 1, the uniformity of the switching parameters of Pt/Ti/HfOx/Pt devices is significantly improved. The OFF/ON window maintains about 100 at the read voltage of 0.1 V.
(Charge carriers: generation, recombination, lifetime, and trapping)
引用本文:
. [J]. 中国物理快报, 2014, 31(10): 107303-107303.
PANG Hua, DENG Ning. A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap. Chin. Phys. Lett., 2014, 31(10): 107303-107303.
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