Nonvolatile Resistive Switching and Physical Mechanism in LaCrO$_{3}$ Thin Films
Wan-Jing Hu1,2 , Ling Hu1** , Ren-Huai Wei1 , Xian-Wu Tang1 , Wen-Hai Song1 , Jian-Ming Dai1 , Xue-Bin Zhu1** , Yu-Ping Sun1,3,4
1 Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 2300312 University of Science and Technology of China, Hefei 2300263 High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 2300314 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093
Abstract ：Polycrystalline LaCrO$_{3}$ (LCO) thin films are deposited on Pt/Ti/SiO$_{2}$/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching (RS) behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of $\sim 10^{4}$ between the high resistance state (HRS) and low resistance state (LRS) and exhibits excellent endurance/retention characteristics. The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies, which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results. Further analysis shows that the reset current $I_{\rm R}$ and reset power $P_{\rm R}$ in the reset processes exhibit a scaling law with the resistance in LRS ($R_{0}$), which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.
收稿日期: 2018-01-11
出版日期: 2018-03-13
:
73.40.Rw
(Metal-insulator-metal structures)
73.50.-h
(Electronic transport phenomena in thin films)
73.61.-r
(Electrical properties of specific thin films)
73.61.Ng
(Insulators)
引用本文:
. [J]. 中国物理快报, 2018, 35(4): 47301-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/4/047301
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I4/47301
[1] Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632 [2] Shang D S, Sun J R, Shen B G and Matthias W 2013 Chin. Phys. B 22 067202 [3] Pan F Gao S, Chen C, Song C and Zeng F 2014 Mater. Sci. Eng. R 83 1 [4] Sawa A 2008 Mater. Today 11 28 [5] Gao T T, Tan T T and Liu Z T 2015 Chin. Phys. Lett. 32 016801 [6] Szot K, Speier W, Gihlmayer G and Waser R 2006 Nat. Mater. 5 312 [7] Lai X B, Wang Y H, Shi X L, Li D Y, Liu B Y, Wang R M and Zhang L W 2016 Chin. Phys. Lett. 33 067202 [8] Guo Z, Li M Q and Huang X J 2015 Small 11 6285 [9] Zhou J W, Li T R, Zhang D, Ren B, Zhang S W, Huang J, Zhang J M, Wang L, Jiang Y C, Gao J and Wang L J 2017 Vacuum 135 115 [10] Chen C, Yang Y C, Zeng F and Pan F 2010 Appl. Phys. Lett. 97 083502 [11] Kim T W, Zeigler D F, Acton O, Yip H L, Ma H and Jen A K Y 2012 Adv. Mater. 24 828 [12] Khare A, Shin D, Yoo T S, Kim M, Kang T D, Lee J, Roh S, Jung I, Hwang J, Kim S W, Noh T W, Ohta H and Choi W S 2017 Adv. Mater. 29 1606566 [13] Kubicek M, Bork A H and Rupp J L M 2017 J. Mater. Chem. A 5 11983 [14] Janousch M, Meijer G I, Staub U, Delley B, Karg S F and Andreasson B P 2007 Adv. Mater. 19 2232 [15] Deng H L, Zhang M, Li T, Wei J Z, Chu S J, Du M Y and Yan H 2015 J. Alloys Compd. 639 235 [16] Seong T, Choi K B, Seo I, Oh J, Moon J W, Hong K and Nahm S 2012 Appl. Phys. Lett. 100 212111 [17] Fu Y J, Xia F J, Jia Y L, Jia C J, Li J Y, Dai X H, Fu G S, Zhu B Y and Liu B T 2014 Appl. Phys. Lett. 104 223505 [18] Liu D Q, Wang N N, Wang G, Shao Z Z, Zhu X, Zhang C Y and Cheng H F 2013 Appl. Phys. Lett. 102 134105 [19] Yan Z B, Guo Y Y, Zhang G Q and Liu M J 2011 Adv. Mater. 23 1351 [20] Sharma Y, Misra P and Katiyar R S 2014 J. Appl. Phys. 116 084505 [21] Acharya S K, Nallagatla R V, Togibasa O, Lee B W, Liu C, Jung C U, Park B H, Park J, Cho Y, Kim D, Jo J, Kwon D, Kim M, Hwang C S and Chae S C 2016 ACS Appl. Mater. Interfaces 8 7902 [22] Pena M A and Fierro J L G 2001 Chem. Rev. 101 1981 [23] Waser R and Aono M 2007 Nat. Mater. 6 833 [24] Shi T, Chen Y P and Guo X 2016 Prog. Mater. Sci. 80 77 [25] Fergus J W 2004 Solid State Ionics 171 1 [26] Kaddouri A, Ifrah S and Bergeret G 2009 Catal. Lett. 129 336 [27] Larring Y, Vigen C, Ahouanto F, Fontaine M, Peters T, Smith J B, Norby T and Bredesen R 2012 Biochim. Biophys. - Acta Biomembr. 2 665 [28] Zenou V Y, Fowler D E, Gautier R, Barnett S A, Poeppelmeier K R and Marks L D 2016 Solid State Ionics 296 90 [29] Su H Y and Sun K J 2015 J. Mater. Sci. 50 1701 [30] Dabaghmanesh S, Sarmadian N, Neyts E C and Partoensa B 2017 Phys. Chem. Chem. Phys. 19 22870 [31] Cherry M, Islam M S and Catlw C R A 1995 J. Solid State Chem. 118 125 [32] Hu W, Zou L L, Chen R Q, Xie W, Chen X M, Qin N, Li S W, Yang G W and Bao D H 2014 Appl. Phys. Lett. 104 143502 [33] Chiu F 2014 Adv. Mater. Sci. Eng. 2014 578168 [34] Chen R Q, Hu W, Zou L L, Xie W, Li B J and Bao D H 2014 Appl. Phys. Lett. 104 242111 [35] Hu L, Lin G T, Luo X, Wei R H, Zhu X B, Song W H, Dai J M and Sun Y P 2016 J. Appl. Phys. 120 215303 [36] Sharma Y, Misra P, Pavunny S P and Katiyar R S 2014 Appl. Phys. Lett. 104 073501 [37] Kim K M, Jeong D S and Hwang C S 2011 Nanotechnology 22 254002 [38] Zhang K H L, Du Y, Sushko P V, Bowden M E, Shutthanandan V, Sallis S, Piper L F J and Chambers S A 2015 Phys. Rev. B 91 155129 [39] Bonet A, Baben M, Travitzky N and Greil P 2016 J. Am. Ceram. Soc. 99 917 [40] Guo D Y, Wu Z P, An Y H, Li P G, Wang P C, Chu X L, Guo X C, Zhi Y S, Lei M, Li L H and Tang W H 2015 Appl. Phys. Lett. 106 042105 [41] Kim S I, Sa Y H, Kim J, Chang Y W, Kim N, Kim H and Yoo K 2014 Appl. Phys. Lett. 104 023513 [42] Kim J, Jung K, Kim Y, Jo Y, Cho S, Woo H, Lee S, Inamdar A I, Hong J, Lee J, Kim H and Im H 2016 Sci. Rep. 6 23930
[1]
.
[2]
.
[3]
.
[4]
.
[5]
GANG Jian-Lei;LI Song-Lin;LIAO Zhao-Liang;MENG Yang;LIANG Xue-Jin;CHEN Dong-Min. Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3 MnO3 /Pt Devices
[6]
HUANG Yu-Jian;HUANG Yue;DING Shi-Jin;ZHANG Wei;LIU Ran. Electrical Characterization of Metal--Insulator--Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application
[7]
M. Y. Nadee;Nadeem Iqbal;M. F. Wasiq;A. U. Khosa. High Field Electrical Conduction in Pre-Formed Al--ZnS--Al Thin Films in Metal--Insulator--Metal Devices
[8]
FANG Liang;SHEN Ming-Rong;LI Zhen-Ya;CAO Wen-Wu. Analysis of Electrical Properties of Post-Annealed Polycrystalline CaCu3 Ti4 O12 Films by Impedance Spectroscopy
[9]
WEI Dan;PIAO Kun;QIN Jian;DONG Zhong. Calculation of Resistivity of the Insulating Layer in Tunnelling-Magnetoresistive Head by Fast Green Function Method
[10]
LIU Cun-Ye;LI Jian;CHEN Jian-Yong;XU Qing-Yu;NI Gang;DU You-Wei. Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions
[11]
LIU Hong-wu;GAO Chun-xiao;WANG Hui;CUI Qi-liang;ZOU Guang-tian;HUANG Xi-min. Effects of Chamber Pressure on Current-Voltage Characteristic of Metal-Insulator-Metal Element in Heat-Treating Anodized Ta2O5 Film
[12]
CHEN Hui-yu;FENG Yong-jia;SU Chang. Giant Magnetic Tunneling Effect in 81NiFe/A12 O3 /Fe Junction
[13]
WANG Jinsong;YE Gaoxiang;XU Yuqing;ZHANG Qirui. Voltage Breakdown of Ag Thin Film Deposited on Fractal Surface
2018, Vol. 35 
