Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3MnO3/Pt Devices
GANG Jian-Lei1,2, LI Song-Lin1, LIAO Zhao-Liang1, MENG Yang1, LIANG Xue-Jin1, CHEN Dong-Min1
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902Signal and Communication Research Institute, China Academy of RailwaySciences, Beijing 100081
Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3MnO3/Pt Devices
GANG Jian-Lei1,2, LI Song-Lin1, LIAO Zhao-Liang1, MENG Yang1, LIANG Xue-Jin1, CHEN Dong-Min1
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902Signal and Communication Research Institute, China Academy of RailwaySciences, Beijing 100081
摘要Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis: clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.
Abstract：Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis: clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.
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2010, Vol. 27 
