Electrical Characterization of Metal--Insulator--Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application
HUANG Yu-Jian, HUANG Yue, DING Shi-Jin, ZHANG Wei, LIU Ran
Department of Microelectronics, Fudan University, Shanghai 200433
Electrical Characterization of Metal--Insulator--Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application
HUANG Yu-Jian;HUANG Yue;DING Shi-Jin;ZHANG Wei;LIU Ran
Department of Microelectronics, Fudan University, Shanghai 200433
摘要Metal--insulator--metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4×10-9A/cm2 at 1.8\,V and 125°C, a breakdown electric field of 2.6MV/cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V2 and -824ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole--Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.
Abstract：Metal--insulator--metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4×10-9A/cm2 at 1.8\,V and 125°C, a breakdown electric field of 2.6MV/cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V2 and -824ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole--Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.
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