摘要The high field electrical conduction mechanism for the widely used ZnS thin films in the microelectronic industry is investigated. Experimental data on the dc conduction as a function of the applied bias for the Al--ZnS--Al devices is carefully compared with the theoretical equations given by Schottky and Poole--Frenkel. The results yield the value of the coefficient of the barrier lowering ?compatible with the Schottky theory rather than the Poole--Frenkel theory, which are also in agreement with the results reported earlier by Maekawa [Phys. Rev. Lett. 24 (1970) 1175]
Abstract：The high field electrical conduction mechanism for the widely used ZnS thin films in the microelectronic industry is investigated. Experimental data on the dc conduction as a function of the applied bias for the Al--ZnS--Al devices is carefully compared with the theoretical equations given by Schottky and Poole--Frenkel. The results yield the value of the coefficient of the barrier lowering ?compatible with the Schottky theory rather than the Poole--Frenkel theory, which are also in agreement with the results reported earlier by Maekawa [Phys. Rev. Lett. 24 (1970) 1175]
M. Y. Nadee;Nadeem Iqbal;M. F. Wasiq;A. U. Khosa. High Field Electrical Conduction in Pre-Formed Al--ZnS--Al Thin Films in Metal--Insulator--Metal Devices[J]. 中国物理快报, 2007, 24(7): 2068-2069.
M. Y. Nadee, Nadeem Iqbal, M. F. Wasiq, A. U. Khosa. High Field Electrical Conduction in Pre-Formed Al--ZnS--Al Thin Films in Metal--Insulator--Metal Devices. Chin. Phys. Lett., 2007, 24(7): 2068-2069.
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