Electron Aceleration Process in ZnS-Type Thin Film Electroluminescence Devices
ZHAO Hui, WANG Yong-sheng, XU Zheng, XU Xu-rong
Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044
Electron Aceleration Process in ZnS-Type Thin Film Electroluminescence Devices
ZHAO Hui;WANG Yong-sheng;XU Zheng;XU Xu-rong
Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044
关键词 ：
78.60.Fi ,
73.50.Fq ,
72.20.Ht
Abstract ： Based on the calculations about scattering rates, the electron acceleration process of ZnS-type thin film electroluminescent devices is studied in detail through Monte Carlo method. The acceleration time and drift length before the balance of acceleration and Scattering are about 200 fs and 30-40nm, respectively. The steady average kinetic energy of electrons increases with electric field. Field emission process of electrons trapped at interface states only affects the acceleration process of electron transport and makes no influence on steady state. New explanations about the “dead layer” phenomenon and the overshoot in the averge drift velocity are proposed based on the calculations.
Key words ：
78.60.Fi
73.50.Fq
72.20.Ht
出版日期: 1999-03-01
:
78.60.Fi
(Electroluminescence)
73.50.Fq
(High-field and nonlinear effects)
72.20.Ht
(High-field and nonlinear effects)
引用本文:
ZHAO Hui;WANG Yong-sheng;XU Zheng;XU Xu-rong. Electron Aceleration Process in ZnS-Type Thin Film Electroluminescence Devices[J]. 中国物理快报, 1999, 16(3): 217-219.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I3/217
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1999, Vol. 16 
