摘要We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4nm and the interface states are well passivated by hydrogen. For the nc-Si/SiO2 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4nm. The role of hydrogen and oxygen is discussed in detail.
Abstract：We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4nm and the interface states are well passivated by hydrogen. For the nc-Si/SiO2 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4nm. The role of hydrogen and oxygen is discussed in detail.
[1] Ran G Z and Sun Y K et al 2003 Chin. Phys. Lett. 20298 [2] Wang X X and Zhang J G et al 2006 Chin. Phys. Lett. 23 1306 [3] Lockwood D J and Lu Z H et al 1996 Phys. Rev. Lett. 76539 [4] Sullivan B T, Lockwood D J et al 1996 Appl. Phys. Lett. 69 3149 [5] Kanemitsu Y and M. Liboshi et al 2000 Appl. Phys. Lett. 76 2200 [6] Heikkil\"a L and Kuusela T et al 1998 Appl. Surf. Sci. 133 84 [7] Gaburro Z and Pucker G et al 2000 Sol. Stat. Comm. 114 33 [8] Yoshida T and Yamada Y J et al 1998 Appl. Phys. 83 5427 [9] Iacona F and Franz\`o G et al 2000 J. Appl. Phys. 87 1295 [10] Wang M and Chen K et al 1998 Appl. Phys. Lett. 73 105 [11] Khriachtchev L and R\"as\"anen M et al 1999 J. Appl.Phys. 86 5601 [12] Novikov S V and Sinkkonen J et al 1997 J. Cryst.Growth 175-176 514 [13] Wu X and Bittner A M et al 2000 Appl. Phys. Lett. 77645 [14] Wolkin M V and Jorne J et al 1999 Phys. Rev. Lett. 82197 [15] Photopoulos P and Nassiopoulou A G et al 2000 Appl.Phys. Lett. 76 3588 [16] Zhou F and Head J D et al 2000 J. Phys. Chem. B 104 9981 [17] Singh J 2002 J. Non-Cryst. Solids 299302 444 [18] Prokes S M and Glembocki O J 1994 Phys. Rev. B 49 2238 [19] Averboukh B and Huber J R et al 2002 Appl. Phys. 923564 [20] Zhou Z and Brus L et al 2003 Nano Lett. 3 163 [21] Kanemitsu Y and Ogawa T et al 1993 Phys. Rev. B 48 4883 [22] Yue G Z and Lorentzen J D et al 1999 Appl. Phys. Lett. 75 492 [23] Islam M N and Kumar S et al 2003 J. Appl. Phys. 931753 [24] Paillard V and Puech P et al 1999 J. Appl. Phys. 861921 [25] Kumagai M and Takagahara T 1989 Phys. Rev. B 40 12359 [26] Takagahara T and Takeda K 1992 Phys. Rev. B 46 15578 [27] Lannoo M and Delerue C et al 1995 Phys. Rev. Lett. 743415 [28] Proot J P and Delerue C et al 1992 Appl. Phys. Lett. 61 1948
2007, Vol. 24 
