State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433
Abstract:An ultra-thin molybdenum(VI) oxide (MoO$_{3})$ modification layer can significantly improve hole injection from an electrode even though the MoO$_{3}$ layer does not contact the electrode. We find that as the thickness of the organic layer between MoO$_{3}$ and the electrode increases, the hole injection first increases and it then decreases. The optimum thickness of 5 nm corresponds to the best current improvement 70%, higher than that in the device where MoO$_{3}$ directly contacts the Al electrode. According to the 4,4-bis[N-(1-naphthyl)-N-phenyl-amino] biphenyl (NPB)/MoO$_{3}$ interface charge transfer mechanism and the present experimental results, we propose a mechanism that mobile carriers generated at the interface and accumulated inside the device change the distribution of electric field inside the device, resulting in an increase of the probability of hole tunneling through the injection barrier from the electrode, which also explains the phenomenon of hole injection enhanced by MoO$_{3}$/NPB/Al composite anode. Based on this mechanism, different organic materials other than NPB were applied to form the composite electrode with MoO$_{3}$. Similar current enhancement effects are also observed.
Irfan I and Gao Y 2015 Improvement of Charge Transfer between Electrode, Semiconductor by Thin Metal Oxide Insertion in Topics in Applied Physics ed Yang Y and Li G (Berlin: Heidelberger) PLATZ 3, D-14197 vol 130 p 67
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Meng Y, Ji H and Sun Q 2013 The Mechanism of Modification Effect of MoO$_3$ on Al Anode of Top-Emitting Organic Light-Emitting Device (Beijing: People's Press) (in Chinese)
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