CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films
WANG Yan1,2, LIU Qi2, LV Hang-Bing2, LONG Shi-Bing2, ZHANG Sen2, LI Ying-Tao1,2, LIAN Wen-Tai2, YANG Jian-Hong1**, LIU Ming2
1 College of Physical Science and Technology, Lanzhou University, Lanzhou 730000 2 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films
WANG Yan1,2, LIU Qi2, LV Hang-Bing2, LONG Shi-Bing2, ZHANG Sen2, LI Ying-Tao1,2, LIAN Wen-Tai2, YANG Jian-Hong1**, LIU Ming2
1 College of Physical Science and Technology, Lanzhou University, Lanzhou 730000 2 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
摘要We systematically investigate the resistive switching characteristics of SiO2 films with a Cu/SiO2/Cu/SiO2/Pt multilayer structure. The device exhibits good resistive switching performances, including a high ON/OFF resistance ratio (>103), good retention characteristic (>104s), satisfactory switching endurance (>200 cycles), a fast programming speed (<100 ns) and a high device yield (∼100%). Considering these results, SiO2-based memories have highly promising applications for nonvolatile memory devices.
Abstract：We systematically investigate the resistive switching characteristics of SiO2 films with a Cu/SiO2/Cu/SiO2/Pt multilayer structure. The device exhibits good resistive switching performances, including a high ON/OFF resistance ratio (>103), good retention characteristic (>104s), satisfactory switching endurance (>200 cycles), a fast programming speed (<100 ns) and a high device yield (∼100%). Considering these results, SiO2-based memories have highly promising applications for nonvolatile memory devices.
WANG Yan;LIU Qi;LV Hang-Bing;LONG Shi-Bing;ZHANG Sen;LI Ying-Tao;LIAN Wen-Tai;YANG Jian-Hong**;LIU Ming
. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films[J]. 中国物理快报, 2011, 28(7): 77201-077201.
WANG Yan, LIU Qi, LV Hang-Bing, LONG Shi-Bing, ZHANG Sen, LI Ying-Tao, LIAN Wen-Tai, YANG Jian-Hong**, LIU Ming
. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films. Chin. Phys. Lett., 2011, 28(7): 77201-077201.
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2011, Vol. 28 
