2011, Vol. 28(7): 77201-077201    DOI: 10.1088/0256-307X/28/7/077201
	CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films
	WANG Yan1,2, LIU Qi2, LV Hang-Bing2, LONG Shi-Bing2, ZHANG Sen2, LI Ying-Tao1,2, LIAN Wen-Tai2, YANG Jian-Hong1**, LIU Ming2
	1 College of Physical Science and Technology, Lanzhou University, Lanzhou 730000 2 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
	收稿日期 2011-03-23  修回日期 1900-01-01
	Supporting info
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