摘要Zener tunneling at finite temperature in one-dimensional organic semiconductors under an external electric field is studied within the framework of a tight-binding model. The temperature effect is simulated by the introduction of random forces to lattice motion. It is found that the critical field strength of Zener tunneling decreases with the increasing temperature. Under sufficiently high electric field, dielectric breakdown occurs, which is characterized by the irreversibility of the energy gap.
Abstract：Zener tunneling at finite temperature in one-dimensional organic semiconductors under an external electric field is studied within the framework of a tight-binding model. The temperature effect is simulated by the introduction of random forces to lattice motion. It is found that the critical field strength of Zener tunneling decreases with the increasing temperature. Under sufficiently high electric field, dielectric breakdown occurs, which is characterized by the irreversibility of the energy gap.
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