Photoluminescence of SiOx Thin Films After Annealing
at Various Temperatures
FANG Ying-Cui1, LI Lu-Ying2, ZHAO You-Yuan2, Qi Le-Jun2, LI Wei-Qing2, ZHANG Zhuang-Jian1, LU Ming2
1Department of Materials Science, Fudan University, Shanghai 200433
2Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
Photoluminescence of SiOx Thin Films After Annealing
at Various Temperatures
1Department of Materials Science, Fudan University, Shanghai 200433
2Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
Abstract： We study photoluminescence (PL) of SiOx (0< x <2) thin films after annealing at temperatures in the range of 700-1100°C. The SiOx thin films were prepared by evaporation of SiO powder onto the substrate of Si(100). Two PL emission structures were observed in the measuring range of 580 -755 nm. The one centered around ～ 730 nm was confirmed to be due to Si nanocrystals. The origin for the other one spanning the range of 580-650 nm was investigated by using hydrogen and oxygen passivations, and by short time annealing at 1100°C followed by hydrogenation. Our results support the model of structural defects in SiO2 matrix for the origin of the 580-650 nm PL peak.
FANG Ying-Cui;LI Lu-Ying;ZHAO You-Yuan;Qi Le-Jun;LI Wei-Qing;ZHANG Zhuang-Jian;LU Ming. Photoluminescence of SiOx Thin Films After Annealing
at Various Temperatures[J]. 中国物理快报, 2003, 20(11): 2042-2044.
FANG Ying-Cui, LI Lu-Ying, ZHAO You-Yuan, Qi Le-Jun, LI Wei-Qing, ZHANG Zhuang-Jian, LU Ming. Photoluminescence of SiOx Thin Films After Annealing
at Various Temperatures. Chin. Phys. Lett., 2003, 20(11): 2042-2044.
2003, Vol. 20 
