| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Solution-Processed High Mobility Top-Gate N-Channel Polymer Field-Effect Transistors |
| XIANG Lan-Yi, YING Jun, HAN Jin-Hua, WANG Wei**, XIE Wen-Fa |
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
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| Cite this article: |
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XIANG Lan-Yi, YING Jun, HAN Jin-Hua et al 2015 Chin. Phys. Lett. 32 098501 |
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Abstract Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46 cm2/Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene (PS) dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT, a large μ and a poly(methyl methacrylate) (PMMA) dielectric layer with a relatively high-κ adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.
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Received: 07 April 2015
Published: 02 October 2015
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| PACS: |
85.30.Tv
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(Field effect devices)
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72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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