| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance |
| HU Sheng-Dong1,2**, JIN Jing-Jing1, CHEN Yin-Hui1, JIANG Yu-Yu1, CHENG Kun1, ZHOU Jian-Lin1, LIU Jiang-Tao1, HUANG Rui1, YAO Sheng-Jie1 |
1College of Communication Engineering, Chongqing University, Chongqing 400044
2National Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060
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| Cite this article: |
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HU Sheng-Dong, JIN Jing-Jing, CHEN Yin-Hui et al 2015 Chin. Phys. Lett. 32 098502 |
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Abstract A novel silicon-on-insulator (SOI) power metal-oxide-semiconductor field effect transistor with an interface-gate (IG SOI) structure is proposed, in which the trench polysilicon gate extends into the buried oxide layer (BOX) at the source side and an IG is formed. Firstly, the IG offers an extra accumulation channel for the carriers. Secondly, the subsidiary depletion effect of the IG results in a higher impurity doping for the drift region. A low specific on-resistance is therefore obtained under the condition of a slightly enhanced breakdown voltage for the IG SOI. The influences of structure parameters on the device performances are investigated. Compared with the conventional trench gate SOI and lateral planar gate SOI, the specific on-resistances of the IG SOI are reduced by 36.66% and 25.32% with the breakdown voltages enhanced by 2.28% and 10.83% at the same SOI layer of 3 μm, BOX of 1 μm, and half-cell pitch of 5.5 μm, respectively.
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Received: 27 March 2015
Published: 02 October 2015
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.-z
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(Semiconductor devices)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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