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First Evaluation and Frequency Measurement of the Strontium Optical Lattice Clock at NIM
LIN Yi-Ge, WANG Qiang, LI Ye, MENG Fei, LIN Bai-Ke, ZANG Er-Jun, SUN Zhen, FANG Fang, LI Tian-Chu, FANG Zhan-Jun
Chin. Phys. Lett. 2015, 32 (09):
090601
.
DOI: 10.1088/0256-307X/32/9/090601
An optical lattice clock based on 87Sr is built at National Institute of Metrology (NIM) of China. The systematic frequency shifts of the clock are evaluated with a total uncertainty of 2.3×10−16. To measure its absolute frequency with respect to NIM's cesium fountain clock NIM5, the frequency of a flywheel H-maser of NIM5 is transferred to the Sr laboratory through a 50-km-long fiber. A fiber optical frequency comb, phase-locked to the reference frequency of this H-maser, is used for the optical frequency measurement. The absolute frequency of this Sr clock is measured to be 429228004229873.7(1.4) Hz.
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Consistency of Perfect Fluidity and Jet Quenching in Semi-Quark-Gluon Monopole Plasmas
Jiechen Xu, Jinfeng Liao, Miklos Gyulassy
Chin. Phys. Lett. 2015, 32 (09):
092501
.
DOI: 10.1088/0256-307X/32/9/092501
We utilize a new framework, CUJET3.0, to deduce the energy and temperature dependence of the jet transport parameter, q^ (E<10 GeV, T), from a combined analysis of available data on nuclear modification factor and azimuthal asymmetries from high energy nuclear collisions at RHIC/BNL and LHC/CERN. Extending a previous perturbative-QCD based jet energy loss model (known as CUJET2.0) with (2+1)D viscous hydrodynamic bulk evolution, this new framework includes three novel features of nonperturbative physics origin: (i) the Polyakov loop suppression of color-electric scattering (aka 'semi-QGP' of Pisarski et al.), (ii) the enhancement of jet scattering due to emergent magnetic monopoles near Tc (aka 'magnetic scenario' of Liao and Shuryak), and (iii) thermodynamic properties constrained by lattice QCD data. CUJET3.0 reduces to v2.0 at high temperatures T>400 MeV, while greatly enhances q^ near the QCD deconfinement transition temperature range. This enhancement accounts well for the observed elliptic harmonics of jets with pT>10 GeV. Extrapolating our data-constrained q^ down to thermal energy scales, E∼2 GeV, we find for the first time a remarkable consistency between high energy jet quenching and bulk perfect fluidity with η/s∼ T3q^∼0.1 near Tc.
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High-Power Continuous-Wave Nd:GdVO4 Solid-State Laser Dual-End-Pumped at 880 nm
MAO Ye-Fei, ZHANG Heng-Li, SANG Si-Han, ZHANG Xin, YU Xi-Long, XING Ji-Chuan, XIN Jian-Guo, JIANG Yi
Chin. Phys. Lett. 2015, 32 (09):
094201
.
DOI: 10.1088/0256-307X/32/9/094201
A high-power cw all-solid-state Nd:GdVO4 laser operating at 880 nm is reported. The laser consists of a low doped level Nd:GdVO4 crystal dual-end-pumped by two high-power diode lasers and a compact negative confocal unstable–stable hybrid resonator. At an incident pump power of 820 W, a maximum cw output of 240 W at 1064 nm is obtained. The optical-to-optical efficiency and slope efficiency are 40.7% and 53.2%, respectively. The M2 factors in the unstable direction and in the stable direction are 4.38 and 5.44, respectively.
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A Polarization-Insensitive Broadband Metamaterial Absorber at the Optical Regime
SHI Jun-Xian, ZHANG Wen-Chao, XU Wan, ZHU Qing, JIANG Xia, LI Dong-Dong, YAN Chang-Chun, ZHANG Dao-Hua
Chin. Phys. Lett. 2015, 32 (09):
094204
.
DOI: 10.1088/0256-307X/32/9/094204
We present a polarization-insensitive broadband absorber which has a feature of metal-insulator-metal structures. The top metal layer consists of four-fan-rings-shaped gold. Simulations show that the absorber exhibits an absorption of nearly unity at the wavelength of 386.1 nm and a relative absorption bandwidth of 0.548, which refers to the ratio of the full absorption bandwidth over an absorption of 0.9 to the central wavelength. Meanwhile, the absorption is nearly independent of the polarized direction of the incident wave. This absorption bandwidth with insensitive polarization is widely reported to date for such metal-insulator-metal structures. Such a structure offers a way of realization of a polarization-insensitive broadband absorber ranging in ultraviolet-to-visible wavelengths.
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A Single-Frequency Linearly Polarized Fiber Laser Using a Newly Developed Heavily Tm3+-Doped Germanate Glass Fiber at 1.95 μm
YANG Qi, XU Shan-Hui, LI Can, YANG Chang-Sheng, FENG Zhou-Ming, XIAO Yu, HUANG Xiang, YANG Zhong-Min
Chin. Phys. Lett. 2015, 32 (09):
094206
.
DOI: 10.1088/0256-307X/32/9/094206
A compact linearly polarized, low?noise, narrow-linewidth, single-frequency fiber laser at 1950 nm is demonstrated. This compact fiber laser is based on a 21-mm-long homemade Tm3+-doped germanate glass fiber. Over 100-mW stable continuous-wave single transverse and longitudinal mode lasing at 1950 nm are achieved. The measured relative intensity noise is less than -135 dB/Hz at frequencies over 5 MHz. The signal-to-noise ratio of the laser is larger than 72 dB, and the laser linewidth is less than 6 kHz, while the obtained linear polarization extinction ratio is higher than 22 dB.
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Urtra-Hard Bonds in P-Carbon Stronger than Diamond
GUO Wen-Feng, WANG Ling-Sheng, LI Zhi-Ping, XIA Mei-Rong, GAO Fa-Ming
Chin. Phys. Lett. 2015, 32 (09):
096201
.
DOI: 10.1088/0256-307X/32/9/096201
The hardness and ideal strength of P-carbon, i.e., a new carbon phase for the cold-compressed carbon with an orthogonal structure recently proposed and named as P-carbon, are investigated by means of first-principles calculations. The strength calculations reveal that the failure mode in P-carbon is dominated by the tensile type. The ideal tensile strength of P-carbon is calculated to be 76.7 GPa in the [001] direction, which is higher than that of the previously known most stable Z-carbon, of 71.4 GPa. Meanwhile, the theoretical Vickers hardness of P-carbon is estimated as 89 GPa, which is comparable with that of diamond. Especially, two types of bonds in P-carbon with hardness values of 114 GPa and 105 GPa are significantly stronger than those of diamond. The results provide insight into exploration of the ultra-hard P-carbon for potentially technological applications.
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A New Quantity to Characterize Stochastic Resonance
WANG Yu-Xin, ZHAI Ji-Quan, XU Wei-Wei, SUN Guo-Zhu, WU Pei-Heng
Chin. Phys. Lett. 2015, 32 (09):
097401
.
DOI: 10.1088/0256-307X/32/9/097401
In a double-well system, we investigate theoretically the population distribution of a particle perturbed by a weak sinusoidal signal with a Gaussian white noise accompanied. Our numerical simulation shows that the probability of the particle staying in the right potential well, PR, exhibits an extreme value at specific noise intensity D depending on the frequency of the sinusoidal signal, which is a key feature of stochastic resonance. This is confirmed by calculating the power spectrum of the output signal, in which the extreme value of the amplitude locates at the same noise intensity. These results provide us with a new way to quantify the stochastic resonance by measuring the population distribution of the particle.
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The Model for Linear Magnetoresistance of Two-Dimensional Metal-Semiconductor Composites with Interfacial Shells
XU Jie, WANG Guo-Dong, LI Shan-Dong, LI Qiang, GAO Xiao-Yang
Chin. Phys. Lett. 2015, 32 (09):
097501
.
DOI: 10.1088/0256-307X/32/9/097501
A metal-semiconductor composite with the interfacial shells is investigated theoretically for the large linear magnetoresistance effect of high doping Ag2+δSe and Ag2+δTe materials. The magnetoresistance (MR) of composites is a function of the magnetic field, temperature, the conductivities of two phases without magnetic field, and the thickness and conductivity of the interfacial shells. The MR increases with the increase of the magnetic field and with the decrease of temperature, and no saturation is found even under the high magnetic field. Moreover, it is interestingly found that the interfacial shell is an important factor for the MR of the composites. The MR increases with the thickness and the conductivity of the interfacial shells. Lastly, the theoretical results on the MR are compared with the experimental data. It is found that the value of the MR of the composite with the interfacial shell is larger than that without the interfacial shell.
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Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode
MU Ye, ZHANG Zhen-Song, WANG Hong-Bo, QU Da-Long, WU Yu-Kun, YAN Ping-Rui, LI Chuan-Nan, ZHAO Yi
Chin. Phys. Lett. 2015, 32 (09):
097801
.
DOI: 10.1088/0256-307X/32/9/097801
It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m2 at low voltage of 4 V.
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Time-Resolved Photoluminescence Study of Silicon Nanoporous Pillar Array
WANG Xiao-Bo, YAN Ling-Ling, LI Yong, LI Xin-Jian
Chin. Phys. Lett. 2015, 32 (09):
097802
.
DOI: 10.1088/0256-307X/32/9/097802
A silicon nanoporous pillar array (Si-NPA) is thought to be a promising functional substrate for constructing a variety of Si-based optoelectronic nanodevices, due to its unique hierarchical structure and enhanced physical properties. This makes the in-depth understanding of the photoluminescence (PL) of Si-NPA crucial for both scientific research and practical applications. In this work, the PL properties of Si-NPA are studied by measuring both the steady-state and time-resolved PL spectrum. Based on the experimental data, the three PL bands of Si-NPA, i.e., the ultraviolet band, the purple-blue plateau and the red band are assigned to the oxygen-excess defects in Si oxide or silanol groups at the surface of Si nanocrystallites (nc-Si), oxygen deficiency defects in Si oxide, and band-to-band transition of nc-Si under the frame of quantum confinement combining with the surface states like Si=O and Si–O–Si bonds at the surface of nc-Si, respectively. These results may provide some novel insight into the PL process of Si-NPA and may be helpful for clarifying the PL mechanism.
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Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN
CHAI Xu-Zhao, ZHOU Dong, LIU Bin, XIE Zi-Li, HAN Ping, XIU Xiang-Qian, CHEN Peng, LU Hai, ZHANG Rong, ZHENG You-Dou
Chin. Phys. Lett. 2015, 32 (09):
097804
.
DOI: 10.1088/0256-307X/32/9/097804
The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34 eV increment of the upward band bending for the oxygen annealed GaN at 1000°C.
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Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates
JIANG Ren-Yuan, XU Sheng-Rui, ZHANG Jin-Cheng, JIANG Teng, JIANG Hai-Qing, WANG Zhi-Zhe, FAN Yong-Xiang, HAO Yue
Chin. Phys. Lett. 2015, 32 (09):
098102
.
DOI: 10.1088/0256-307X/32/9/098102
Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy and secondary ion mass spectroscopy (SIMS). Surface morphology, structural quality and related impurity incorporation are very sensitive to the growth temperature. A significant difference of yellow luminescence is observed and attributed to the incorporation of carbon into GaN films, which is confirmed by SIMS analysis. Our results show that the sample with triangular-pit morphology has significantly higher concentrations of oxygen than the other sample with pentagon-like pit morphology, which is induced by the existence of an N-face in triangular pits.
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Facile Synthesis of Rose-Like NiO Nanoparticles and Their Ethanol Gas-Sensing Property
ZHANG Yong, XIE Long-Zhen, LI Hai-Rong, WANG Peng, LIU Su, PENG Ying-Quan, ZHANG Miao
Chin. Phys. Lett. 2015, 32 (09):
098103
.
DOI: 10.1088/0256-307X/32/9/098103
In this study, rose-like nickel oxide (NiO) nanoparticles with diameters of 400–500 nm are prepared on ITO glass substrates by simple electrodeposition in NiSO46H2O solution at room temperature followed by oxidation in air. Scanning electron microscopy, x-ray diffraction and a transmission electron microscope are used for analyses of the NiO nanoparticles. The ethanol gas sensitivity of these nanoparticles is studied. The results indicate that the rose-like NiO nanoparticles could be used for the fabrication of ethanol gas sensors to monitor the low concentration of ethanol gas in air. Furthermore, at 5 ppm, the NiO nanorose-based sensors show a high response to ethanol (Rg/Ra=8.4).
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Quasiclassical-Trajectory Investigation on the Isotopic Effect of H(D)+LiF→H(D)F+Li (v=0–4, j=0) Reaction
XIE Ting-Xian, ZHANG Ying-Ying, SHI Ying, JIN Ming-Xing
Chin. Phys. Lett. 2015, 32 (09):
098201
.
DOI: 10.1088/0256-307X/32/9/098201
A quasi-classical trajectory (QCT) method is employed to investigate the scalar properties and vector correlations of H+LiF→HF+Li and D+LiF→DF+Li reactions. The collision energy (Ecol=4–25 kcal/mol) and vibrational excitation effects (v=0–4) are studied by using the Aguado–Paniagua2-potential energy surface (AP2-PES) [J. Chem. Phys. 107 (1997) 10085]. The reaction probability, cross section and rate constant are calculated, which demonstrate obvious energy and vibrational excitation dependences in the probability, cross section, and a high-temperature region of the rate constant. In addition, two product angular distributions P(θr) and P(φr) are calculated to facilitate a deeper insight into vector correlations. The H+LiF→HF+Li and D+LiF→DF+Li reactions reveal strong isotopic effects. Moreover, these scalar and vector results of both the reactions show sensitive behaviors to the changes of vibrational levels and the collision energy.
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Solution-Processed High Mobility Top-Gate N-Channel Polymer Field-Effect Transistors
XIANG Lan-Yi, YING Jun, HAN Jin-Hua, WANG Wei, XIE Wen-Fa
Chin. Phys. Lett. 2015, 32 (09):
098501
.
DOI: 10.1088/0256-307X/32/9/098501
Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46 cm2/Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene (PS) dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT, a large μ and a poly(methyl methacrylate) (PMMA) dielectric layer with a relatively high-κ adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.
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A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance
HU Sheng-Dong, JIN Jing-Jing, CHEN Yin-Hui, JIANG Yu-Yu, CHENG Kun, ZHOU Jian-Lin, LIU Jiang-Tao, HUANG Rui, YAO Sheng-Jie
Chin. Phys. Lett. 2015, 32 (09):
098502
.
DOI: 10.1088/0256-307X/32/9/098502
A novel silicon-on-insulator (SOI) power metal-oxide-semiconductor field effect transistor with an interface-gate (IG SOI) structure is proposed, in which the trench polysilicon gate extends into the buried oxide layer (BOX) at the source side and an IG is formed. Firstly, the IG offers an extra accumulation channel for the carriers. Secondly, the subsidiary depletion effect of the IG results in a higher impurity doping for the drift region. A low specific on-resistance is therefore obtained under the condition of a slightly enhanced breakdown voltage for the IG SOI. The influences of structure parameters on the device performances are investigated. Compared with the conventional trench gate SOI and lateral planar gate SOI, the specific on-resistances of the IG SOI are reduced by 36.66% and 25.32% with the breakdown voltages enhanced by 2.28% and 10.83% at the same SOI layer of 3 μm, BOX of 1 μm, and half-cell pitch of 5.5 μm, respectively.
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43 articles
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