| Original Articles |
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Structural, Ferroelectric, Dielectric Properties and Leakage Characteristics of Neodymium-Doped Bi4Ti3O12 Thin Films Prepared by Metalorganic Deposition Method |
| LI Wei;MA Jun;SONG Chun-Hua;BAO Peng;LU Xiao-Mei;ZHU Jin-Song;WANG Ye-Ning |
| National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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LI Wei, MA Jun, SONG Chun-Hua et al 2004 Chin. Phys. Lett. 21 544-547 |
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Abstract Thin films of Nd3+-substituted Bi3.15Nd0.85Ti3O12 (BNT) were fabricated on the (111 Pt/TiO2/SiO2/Si substrates by a metalorganic deposition (MOD) technique. These thin films are possessed of a single-phase bismuth-layered structure showing the preferred (001) and (117) orientation. The values of the remanent polarization Pr and coercive field Ec of the BNT thin film are 27μC/cm2 and 157 kV/cm, respectively. The results of fatigue and retention tests revealed that the BNT thin film was not fatigued up to 1.44 x 1010 switching cycles and the retained charge was unchanged after 1 x 105s. The leakage current behaviour of the BNT thin film was investigated at room temperature and their conduction mechanisms were also discussed. The I-V characteristics of the film show the ohmic behaviour for applied field lower than 40 kV/cm. Nonlinearity in the I-V behaviour was observed at an applied field above 40 kV/cm. In the high field region (E > 95 kV/cm) the sample shows Schottky emission.
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| Keywords:
77.80.-e
77.84.Dy
77.55.+f
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Published: 01 March 2004
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