Chin. Phys. Lett.  2004, Vol. 21 Issue (3): 548-551    DOI:
Original Articles |
Temperature-Induced Switching-Over of the Luminescence Transitions in GaInNAs/GaAs Quantum Wells
BIAN Li-Feng;JIANG De-Sheng;LIANG Xiao-Gan;LU Shu-Long
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Cite this article:   
BIAN Li-Feng, JIANG De-Sheng, LIANG Xiao-Gan et al  2004 Chin. Phys. Lett. 21 548-551
Download: PDF(468KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the band tail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature.

Keywords: 77.84.Bw      76.60.Jv      78.55.-m     
Published: 01 March 2004
PACS:  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
  76.60.Jv  
  78.55.-m (Photoluminescence, properties and materials)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I3/0548
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
BIAN Li-Feng
JIANG De-Sheng
LIANG Xiao-Gan
LU Shu-Long
Related articles from Frontiers Journals
[1] SUN Dun-Lu**,LUO Jian-Qiao,XIAO Jing-Zhong,ZHANG Qing-Li,CHEN Jia-Kang,LIU Wen-Peng,KANG Hong-Xiang,YIN Shao-Tang. Luminescence and Thermal Properties of Er:GSGG and Yb,Er:GSGG Laser Crystals[J]. Chin. Phys. Lett., 2012, 29(5): 548-551
[2] XU Xiao-Yan, MA Xiang-Yang, JIN Lu, YANG De-Ren. Effect of Rapid Thermal Annealing Ambient on Photoluminescence of ZnO Films[J]. Chin. Phys. Lett., 2012, 29(3): 548-551
[3] WU Li-Ang, FU Heng-Yi, QIAN Jiang-Yun, ZHAO Da-Liang, LUO Qun, QIAO Xu-Sheng**, FAN Xian-Ping, ZHANG Xiang-Hua. The Preparation and Photoluminescence Properties of Fluorosilicate Glass Ceramics Containing CeF3:Dy3+ Nanocrystals[J]. Chin. Phys. Lett., 2012, 29(1): 548-551
[4] YANG Lin-Hong, DONG Hong-Xing, SUN Zheng, SUN Liao-Xin, SHEN Xue-Chu, CHEN Zhang-Hai** . Temperature-Induced Phase Transition of In2O3 from a Rhombohedral Structure to a Body-Centered Cubic Structure[J]. Chin. Phys. Lett., 2011, 28(8): 548-551
[5] YIN Yang, RAN Guang-Zhao**, ZHANG Bin, QIN Guo-Gang** . Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 548-551
[6] JIN Hai-Bo**, LI Dan, CAO Mao-Sheng, DOU Yan-Kun, CHEN Tao, WEN Bo, Simeon Agathopoulos . Microwave Absorption Properties of Ni-Foped SiC Powders in the 2–18GHz Frequency Range[J]. Chin. Phys. Lett., 2011, 28(3): 548-551
[7] ZHANG Jia-Chi**, QIN Qing-Song, YU Ming-Hui, SUN Jia-Yao, SHI Liu-Rong, MA Xin-Long . Up-Conversion Photostimulated Luminescence of Mg2SnO4 for Optical Storage[J]. Chin. Phys. Lett., 2011, 28(2): 548-551
[8] LI Xu, GUAN Li**, AN Jia-Yi, JIN Li-Tao, YANG Zhi-Ping, YANG Yan-Min, LI Pan-Lai, FU Guang-Sheng . Synthesis of Red Phosphor CaZrO3:Eu3+ for White Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(2): 548-551
[9] WU Yu-Qiang, WU Hong-Ying**, ZHAO Jie, LU Cui-Min, ZHANG Bao-Long, LIU Qing-Suo, MA Yong-Chang, . The Evidence for Ferroelectricity on Magnetite Ceramics below the Verwey Transition[J]. Chin. Phys. Lett., 2011, 28(12): 548-551
[10] WANG Xiao, JIANG Zui-Min, XU Fei, **, MA Zhong-Quan, XU Run, YU Bin, LI Ming-Zhu, ZHENG Ling-Ling, FAN Yong-Liang, HUANG Jian, LU Fang . Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers[J]. Chin. Phys. Lett., 2011, 28(12): 548-551
[11] LI Pan-Lai**, WANG Zhi-Jun, YANG Zhi-Ping, GUO Qing-Lin . Luminescence and Site Occupancy of Eu2+ in Ba2 Ca(BO3)2[J]. Chin. Phys. Lett., 2011, 28(1): 548-551
[12] ZHONG Ze, SUN Li-Jie, CHEN Xiao-Qing, WU Xiao-Peng, FU Zhu-Xi. Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD[J]. Chin. Phys. Lett., 2010, 27(9): 548-551
[13] MA Yong-Chang, ZHANG Jian-Zhu, ZHAO Jie, LIU Qing-Suo. Temperature- and Frequency-Dependent Dielectric Properties of La1.5Sr0.5NiO4-δ[J]. Chin. Phys. Lett., 2010, 27(8): 548-551
[14] XING Jie, GUO Er-Jia, JIN Kui-Juan, LU Hui-Bin, HE Meng, WEN Juan, YANG Fang. Ultraviolet Sensitive Ultrafast Photovoltaic Effect in Tilted KTaO3 Single Crystals[J]. Chin. Phys. Lett., 2010, 27(2): 548-551
[15] DONG Mu-Sen, , WU Xiao-Ming, , HUA Yu-Lin, **, QI Qing-Jin, , YIN Shou-Gen, . Highly Efficient Simplified Organic Light-Emitting Diodes Utilizing F4-TCNQ as an Anode Buffer Layer[J]. Chin. Phys. Lett., 2010, 27(12): 548-551
Viewed
Full text


Abstract