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Properties of the Alpha Decay Chain Nuclei of 310126, 292120 and 298114
WANG Ting-Tai, JIANG Wei-Zhou, ZHANG Wei, WANG Kun, ZHU Zhi-Yuan
Chin. Phys. Lett. 2004, 21 (3):
453-456
.
The properties of the α decay nuclei of 310126, 292120 and 298114 are investigated in the deformed relativistic mean-field model. The nuclear properties are investigated with the TMA and NL-Z2 parameter sets, and compared with Moller’s result [At. Data Nucl. Data Tables 59 (1995) 185]. The results show that the α decay energy increases systematically with the increasing proton number. Meanwhile, the α decay energy has a minimum value at the point of shell closure. It is also found that of the three nuclei, 292120 is the more likely to be the next doubly magic nucleus.
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Lifetimes of Excited Levels in 131Ce
LI Guang-Sheng, MENG Rui, ZHU Li-Hua, ZHANG Zhen-Long, WANG Yue, WANG Zhi-Min, WEN Shu-Xian, LU Jing-Bin, ZHAO Guang-Yi, LI Xian-Feng, WEN Li-Jun, ZHENG Yong-Nan, ZHENG Yong, LIU Yun-Zuo, YUAN Guan-Jun, YANG Chun-Xiang
Chin. Phys. Lett. 2004, 21 (3):
461-463
.
The fusion--evaporation reaction 116Sn (19F, p3n) 131Ce at projectile energy of 95 MeV is used to populate high spin states in 131Ce. The de-exciting γ-rays are detected in γ-γ coincidence measurement with Compton-suppressed BGO-HPGe detectors. Level lifetimes of 131Ce were determined by using the Doppler shift attenuation method. The experimental results indicate that collectivity of 131Ce is reduced relative to that of 130Ce and it follows that deformation decreases with increase of the neutron number on the basis of systematic comparison of transition quadrupole moments for the light cerium isotopes.
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A Proposed Reaction Channel for the Synthesis of the Superheavy Nucleus Z = 109
WANG Kun, MA Yu-Gang, MA Guo-Liang, WEI Yi-Bin, CAI Xiang-Zhou, CHEN Jin-Gen, GUO Wei, ZHONG Chen, SHEN Wen-Qing,
Chin. Phys. Lett. 2004, 21 (3):
464-467
.
We apply a statistical-evaporation model (HIVAP) to calculate the cross sections of superheavy elements, mainly in relation to actinide targets, and compare with some available experimental data. A reaction channel 30Si + 243Am is proposed for the synthesis of the element Z = 109 and the cross section is estimated.
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Total Cross Sections for Electron Scattering from the Isoelectronic (Z = 14) Molecules (C2H2, CO, HCN and N2) at 100-5000 eV
SHI De-Heng, , ZHU Zun-Lue, SUN Jin-Feng, YANG Xiang-Dong, LIU Yu-Fang, ZHAO Ye
Chin. Phys. Lett. 2004, 21 (3):
474-477
.
A complex optical model potential correlated by the concept of bonded atom, which considers the overlapping effect of electron clouds between the two atoms in a molecule, is employed to calculate the total cross sections for electron scattering from the isoelectronic (Z = 14) molecules (C2H2, CO, HCN, and N2) at 100-5000 eV using the additivity rule at the Hartree-Fock level. The difference between the bonded atom and the free one is that the overlapping effect of electron clouds of bonded atoms in molecules is considered. The quantitative molecular total cross section results are compared with the experimental data and with other calculations available and good agreement is obtained above 100 eV. It is shown that the additivity rule along with the complex optical model potential considering the overlapping effect of electron clouds can give results better than when uncorrelated by it. The correlating calculations are much closer to the experiments than the spherical-complex-optical-potential results in the lower energy region [Phys. Rev. A 45 (1992) 202]. Therefore, considering the overlapping effect of electron clouds in the complex optical potential could be helpful for the better accuracy of the total cross section calculations of electron scattering from molecules.
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Laterally Confined Modes in Wet-Etched, Metal-Coated, Quantum-Dot-Inserted Pillar Microcavities
ZHANG Hao, ZHENG Hou-Zhi, ZHANG Ji-Dong, XU Ping, TAN Ping-Heng, YANG Fu-Hua, ZENG Yi-Ping
Chin. Phys. Lett. 2004, 21 (3):
493-496
.
We report the fabrication and the measurement of microcavities whose optical eigenmodes were discrete and were well predicted by using the model of the photonic dot with perfectly reflected sidewalls. These microcavities consisted of the semiconductor pillar fabricated by the simple wet-etched process and successive metal coating. Angle-resolved photoluminescence spectra demonstrate the characteristic emission of the corresponding eigenmodes, its pattern revealed by varying both polar (θ) and azimuthal (Ф) angles. It is shown that the metal-coated sidewalls can provide an efficient way to suppress the emission due to the leaking modes in these pillar microcavities.
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High-Efficiency White Organic Light-Emitting Devices Based on Multiple Quantum-Well Structure
DUAN Yu, HOU Jing-Ying, WU Zhi-Jun, CHENG Gang, ZHAO Yi, LIU Shi-Yong
Chin. Phys. Lett. 2004, 21 (3):
534-536
.
We report the white organic-light devices (WOLEDs) employing a multiple quantum-well (MQW) structure, which consist of alternate layers of 4,48-bis(2,28-diphenylvinyl)-1,18-biphenyl (DPVBi) and (DPVBi:rubrene) as the potential barrier and the potential well, respectively. The results demonstrate that the MQW structure can prominently increase the performance of WOLEDs; the double quantum well device exhibits the efficiency up to 5.4 cd/A, and yields a peak luminance of 14206 cd/m2. It is also interesting to find that the MQW structure can enhance the colour stability of WOLEDs at different voltages.
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Structural and Transport Properties for Al- and Fe-Doping La0.67Ca0.33MnO3 Perovskite Manganese
CUI Yu-Jian, JIA Guang-Qiang, HAN Yan-Bing, LI Jin-Bo, WANG Xin-Yan, GE Hong-Liang, CAO Shi-Xun, ZHANG Jin-Cang
Chin. Phys. Lett. 2004, 21 (3):
540-543
.
The effects of Al and Fe ion doping in Mn sites was studied for the colossal La0.67Ca0.33MnO3 magnetoresistance material. It was found that when the Fe-doping amount x increases, the crystal cell structure has no obvious change, but the crystal cell volume decrease monotonically for Al-doping. Both resistances increase rapidly and the insulator-metal transition temperature moves to lower temperature and decreases linearly with Al-doping. The area for Al-doping is broader than Fe. At small amount of Al-doping, the resistance satisfy the metal transport property when T < TIM. The characteristic of the transport behaviour for Al- and Fe-doping can be explained by terminating the double exchange channel of Mn3+-O2--Mn4+.
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Structural, Ferroelectric, Dielectric Properties and Leakage Characteristics of Neodymium-Doped Bi4Ti3O12 Thin Films Prepared by Metalorganic Deposition Method
LI Wei, MA Jun, SONG Chun-Hua, BAO Peng, LU Xiao-Mei, ZHU Jin-Song, WANG Ye-Ning
Chin. Phys. Lett. 2004, 21 (3):
544-547
.
Thin films of Nd3+-substituted Bi3.15Nd0.85Ti3O12 (BNT) were fabricated on the (111 Pt/TiO2/SiO2/Si substrates by a metalorganic deposition (MOD) technique. These thin films are possessed of a single-phase bismuth-layered structure showing the preferred (001) and (117) orientation. The values of the remanent polarization Pr and coercive field Ec of the BNT thin film are 27μC/cm2 and 157 kV/cm, respectively. The results of fatigue and retention tests revealed that the BNT thin film was not fatigued up to 1.44 x 1010 switching cycles and the retained charge was unchanged after 1 x 105s. The leakage current behaviour of the BNT thin film was investigated at room temperature and their conduction mechanisms were also discussed. The I-V characteristics of the film show the ohmic behaviour for applied field lower than 40 kV/cm. Nonlinearity in the I-V behaviour was observed at an applied field above 40 kV/cm. In the high field region (E > 95 kV/cm) the sample shows Schottky emission.
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Origin and Characteristics of Blue Light Emission in Solid State Cathodoluminescence of MEH-PPV
QU Chong, XU Zheng, TENG Feng, QIAN Lei, YU Wen-Ge, QUAN Shan-Yu, XU Xu-Rong,
Chin. Phys. Lett. 2004, 21 (3):
552-555
.
Based on our previous study [Chin. Phys. Lett. 20 (2003) 1144] on the solid state cathodoluminescence from organic luminescent materials, here we study the origin and characteristics of blue light emission in solid state cathodoluminescence of Poly [(2-methoxy-5-(2'-ethyl-hexyloxy)phenylene vinyene] (MEH-PPV) and the dependence of each spectral peak on electric field strength. The results demonstrate that the blue spectral shift benefits from field ionization of excitons, and three regions of electric field are found, in which there are pure exciton emission, coexistence of exciton emission and radiative recombination, and pure radiative recombination.
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Improvement of Efficiency and Brightness of Red Organic Light-Emitting Devices Using Double-Quantum-Well Configuration
MI Rui, CHENG Gang, ZHAO Yi, XIE Wen-Fa, HOU Jing-Ying, DING Tao, LIU Shi-Yong
Chin. Phys. Lett. 2004, 21 (3):
556-558
.
We present red double-quantum-well organic light-emitting devices (DQW-OLEDs), in which N,N-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyo-4,4'-diamine (NPB) is used as potential barriers and hole transport layer, 4-(dicyanome-thylene)-2-t-butyl-6-(1,1,7,7-thtramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped tris (8-hydroxyquinoline) aluminium (Alq3) as potential wells and emitter, undoped Alq3 as electron transport layer, respectively. The turn-on voltage is about 4 V. The maximum brightness and electroluminescent (EL) efficiency of the DQW device can reach 5916 cd m-2 at 16 V and 2.85 cd A-1 at 7 V, respectively. In addition, the EL efficiency of the DQW device is relatively independent of the drive voltage in the range from 5 V to 16 V.
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Field Emission Characteristics of BN Films with Cubic-BN Phase
GU Guang-Rui, WU Bao-Jia, JIN Zhe, SUN Long, LI Jun-Jie, ZHAO Yong-Nian, WANG Bo, YAN Hui, WANG Wei-Biao
Chin. Phys. Lett. 2004, 21 (3):
565-567
.
Boron nitride (BN) thin films with cubic boron nitride (c-BN) phase were prepared on the (100)-oriented surface of n-Si (0.008-0.02Ωm) by rf magnetron sputtering physical vapour deposition. The c-BN content is determined to be around 50% by using Fourier transform infrared spectroscopy for the BN thin films. The field emission characteristics of BN films were measured in an ultrahigh vacuum system. It is found that the field emission of the BN film with c-BN phase is evidently more excellent than that without c-BN phase. A turn-on field of 5 V/μm and a current of 460μA/cm2 were obtained for the BN film with c-BN phase. The Fowler-Nordheim plots of emission characteristics of BN films indicate a straight line, which suggests the presence of the FN tunnelling.
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49 articles
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