Total Ionization Dose Effects on Charge Storage Capability of Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$-Based Charge Trapping Memory Cell
Yan-Nan Xu1,2, Jin-Shun Bi1**, Gao-Bo Xu1, Bo Li1, Kai Xi1, Ming Liu1, Hai-Bin Wang3, Li Luo4
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2University of Chinese Academy of Sciences, Beijing 100049 3School of Internet of Things Engineering, HoHai University, Changzhou 213022 4Beijing Jiaotong University, Beijing 100044
Abstract：Because of the discrete charge storage mechanism, charge trapping memory (CTM) technique is a good candidate for aerospace and military missions. The total ionization dose (TID) effects on CTM cells with Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$ (AHA) high-$k$ gate stack structure under in-situ 10 keV x-rays are studied. The $C$–$V$ characteristics at different radiation doses demonstrate that charge stored in the device continues to be leaked away during the irradiation, thereby inducing the shift of flatband voltage ($V_{\rm fb}$). The dc memory window shows insignificant changes, suggesting the existence of good P/E ability. Furthermore, the physical mechanisms of TID induced radiation damages in AHA-based CTM are analyzed.
2018, Vol. 35 
